The 2SA1972(TE6 is a PNP silicon epitaxial transistor manufactured by Toshiba Semiconductor and Storage. This transistor is primarily designed for audio frequency power amplifier applications. The (TE6 suffix likely refers to a specific tape and reel packaging or a particular production lot.

Applications

• Audio power amplifiers: Commonly used in the output stages of audio amplifiers in various applications.
• Stereo amplifiers: Used within stereo amplifier systems for amplifying audio signals.
• Car audio systems: Integrated into automotive audio amplifiers for amplifying signals to the speakers.
• Public address (PA) systems: Used in PA systems for amplifying audio for public broadcasting.
• Musical instrument amplifiers: Employed in amplifiers for musical instruments like guitars and keyboards.

Features

• PNP silicon epitaxial transistor: Offers dependable and efficient amplification.
• High collector current: Capable of handling substantial current flow.
• High power dissipation: Allows for higher output power in audio amplifier designs.
• Low saturation voltage: Enhances efficiency and reduces power loss.
• Excellent linearity: Minimizes distortion of audio signals.

Benefits

• High-quality audio reproduction: Delivers clear, powerful, and accurate sound.
• Reliable performance: Provides stable and consistent operation in various conditions.
• Efficient power usage: Minimizes heat generation and optimizes amplifier efficiency.
• Low distortion: Ensures faithful reproduction of audio signals.
• Versatile application: Suited for a wide variety of audio amplifier designs.

Additional Details

The 2SA1972(TE6 has a collector-emitter voltage (VCEO) of -140V, a collector current (IC) of -1.5A, and a collector power dissipation (PC) of 20W. It has a typical current gain (hFE) ranging from 80 to 240. Its operating junction temperature ranges from -55°C to +150°C. It comes in a TO-220 package. It's often used as a driver transistor in complementary configuration with NPN transistors like 2SC5200.