The 1SS413CT is a silicon epitaxial planar type switching diode manufactured by Toshiba Semiconductor and Storage. It is designed for high-speed switching applications requiring low forward voltage and fast reverse recovery time.

Applications:

• High-speed switching circuits
• Signal detection
• Mixer circuits
• Detector circuits
• Clamp circuits

Features

• Fast reverse recovery time
• Low forward voltage
• Small surface mount package
• High reliability
• Pb-free (RoHS compliant)

Benefits

• Improved efficiency in high-frequency applications
• Reduced power consumption
• Compact circuit design
• Enhanced system stability
• Environmentally friendly

Additional Details:

The 1SS413CT typically features a forward voltage of approximately 0.7V at a forward current of 10mA. The reverse recovery time is typically in the range of 4 ns, making it suitable for high-speed switching. The maximum repetitive peak reverse voltage is generally around 80V, and the maximum forward current is approximately 100mA. The diode is usually packaged in a small surface mount package such as a SOT-23 or similar, facilitating high-density circuit designs. Its operating temperature range is typically from -55°C to +125°C. Due to its fast switching speed and low forward voltage, it is well-suited for applications where minimizing switching losses is critical. It is widely used in various electronic devices, ensuring reliable performance in diverse conditions. The silicon epitaxial planar construction contributes to its high performance and reliability. This diode is designed to provide consistent and efficient operation in demanding electronic circuits.