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XP151A03A7MR

Part No XP151A03A7MR
Manufacturer Torex Semiconductor Ltd
Catalog Electronic Wholesale
Description Power MOS FET
Sample
Rohs State Need to verify
ECAD Module
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Manufacturer Torex Semiconductor Ltd
Win Source Part Number 1282165-XP151A03A7MR
Manufacturer Homepage www.torex.co.jp
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian XP151A03A7MR CAD Model

Description

The XP151A03A7MR is a P-channel MOSFET manufactured by Torex Semiconductor Ltd. It is designed for load switch applications and power management in portable devices.

Applications:

  • Load Switching: Controlling power supply to various loads in portable devices such as smartphones and tablets.
  • Power Management: Used in power management circuits to efficiently distribute power in battery-powered applications.
  • Battery Protection Circuits: Implemented in battery protection circuits to prevent over-discharge and over-charge.
  • DC-DC Converters: Can be utilized in DC-DC converters for voltage regulation and power switching.
  • Portable Devices: Used in a variety of portable electronic devices requiring efficient power control.

Features:

  • P-Channel MOSFET: Enhancement mode P-Channel MOSFET.
  • Low On-Resistance (RDS(on)): Low RDS(on) for efficient switching and reduced power loss.
  • Low Gate Threshold Voltage (VGS(th)): Low VGS(th) suitable for logic-level driving.
  • Small Package: Available in small surface mount packages such as SOT-23 or similar.
  • Fast Switching Speed: Offers fast switching speed for efficient operation in switching circuits.

Benefits:

  • Efficient Power Switching: Low on-resistance minimizes power dissipation, improving efficiency.
  • Logic Level Control: Low gate threshold voltage simplifies driving the MOSFET from logic circuits.
  • Compact Design: Small package allows for high-density designs in space-constrained applications.
  • Reliable Operation: Designed for reliable performance in portable devices and power management systems.

Additional Details:

The datasheet for the XP151A03A7MR will provide details on parameters such as drain-source voltage (VDS), gate-source voltage (VGS), continuous drain current (ID), and power dissipation. Proper thermal management is crucial for ensuring the MOSFET's longevity. The gate charge (Qg) should be considered when designing the gate drive circuit. It is generally available in a SOT-23 or similar small surface mount package.

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