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TPS2813DR

Part No TPS2813DR
Manufacturer Texas Instruments
Catalog PMIC - Gate Drivers
Description IC DUAL HS MOSFET DRVR 8-SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Integrated Circuits
Manufacturer Texas Instruments
Packaging Reel - TR
Status Active
Driven Configuration Low-Side
Channel Type Synchronous
Number of Drivers 2
Gate Type N-Channel, P-Channel MOSFET
Supply Voltage - Operating 4 V to 14 V
Logic Voltage - VIL, VIH 1V, 4V
Current - Peak Output (Source, Sink) 2A, 2A
Input Type Inverting, Non-Inverting
Rise and Fall Time 14ns, 15ns
Temperature Range - Operating -40°C to 125°C (TA)
Mounting SMD (SMT)
Case / Package 8-SOIC
Win Source Part Number 033774-TPS2813DR
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TPS2813DR CAD Model

Description

The TPS2813DR is a robust, high-speed, dual-channel MOSFET driver designed by Texas Instruments, known for its reliability and efficiency in driving power MOSFETs and IGBTs. This driver is specifically engineered to enhance the performance of power-switching applications across a diverse range of industries, including but not limited to, telecommunications, computing systems, and industrial equipment.

Key Features

  • High-Speed Operation: The TPS2813DR is capable of delivering fast switching speeds, which is critical for reducing transition losses and improving power efficiency in high-frequency power circuits.
  • Dual Independent Channels: It features two independent driver channels that can be used to control two separate MOSFETs or one half-bridge circuit, providing design flexibility and efficiency.
  • Output Drive Current: The device can source up to 2A and sink up to 2A of peak current, ensuring that connected MOSFETs are turned on and off rapidly to minimize power loss.
  • Bootstrap Operation: It supports bootstrap operation, which is essential for high-side gate drive applications, allowing for an efficient way to drive N-channel MOSFETs in a half-bridge configuration.
  • Cross-Conduction Prevention: The TPS2813DR incorporates cross-conduction prevention logic, which reduces the risk of shoot-through in the MOSFETs, thereby increasing system reliability.
  • Wide Supply Voltage Range: The device operates over a wide supply voltage range from 4V to 14V, accommodating various application requirements.
  • Thermal Shutdown: It includes a thermal shutdown feature that protects the device from overheating, thus ensuring safe operation under high-current conditions.

Applications

The TPS2813DR is suitable for a variety of applications, including but not limited to:

  • DC to DC converters
  • Motor controllers
  • Power supplies
  • Class-D audio amplifiers
  • Switch mode power supplies (SMPS)

With its compact SOIC-8 package, the TPS2813DR is not only space-efficient but also offers improved thermal performance, making it an ideal choice for space-constrained and thermally sensitive applications. Its industry-standard footprint ensures easy integration into existing designs without the need for significant layout changes.

Overall, the TPS2813DR from Texas Instruments stands out as a high-performance solution for driving power MOSFETs and IGBTs, providing engineers with a reliable and efficient component for their power management designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $1.8843 $56.5290
65+ $1.5461 $100.4965
105+ $1.4978 $157.2690
140+ $1.4495 $202.9300
180+ $1.4012 $252.2160
240+ $1.2562 $301.4880
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,580 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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