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Same model may have multiple batches, images only for reference.
TSM4946DCS
Same model may have multiple batches, images only for reference.

TSM4946DCS

Part No TSM4946DCS
Manufacturer Taiwan Semiconductor
Catalog FETs - Arrays
Description 60V, 4.5A, DUAL N-CHANNEL POWER / Mosfet Array 60V 4.5A (Ta) 2.4W (Ta) Surface Mount 8-SOP
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors>FETs, MOSFETs>FET, MOSFET Arrays
Mfr Taiwan Semiconductor
Series -
Package Tape & Reel (TR)
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel
FET Feature Standard
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 4.5A (Ta)
Rds On (Max) @ Id, Vgs 55mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 910pF @ 24V
Power - Max 2.4W (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SOP
Base Product Number TSM4946
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 5,000 pcs
Win Source Part Number 1383749-TSM4946DCS
Ultra Librarian 3D Model Ultra Librarian TSM4946DCS CAD Model

Description

The 1200885 is a MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) array manufactured by Taiwan Semiconductor.

  • Mounting Type: Surface Mount
  • Package: Tape & Reel (TR)
  • Channel Type: N-channel
  • Drain-to-Source Voltage (Vdss): 60V
  • Continuous Drain Current (Id): 4.5A @ 25°C
  • Maximum On-Resistance (Rds On): 55mOhm @ 4.5A and 10V gate-to-source voltage (Vgs)
  • Gate Charge (Qg): 30nC @ 10V
  • Input Capacitance (Ciss): 910pF @ 24V drain-to-source voltage (Vds)

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