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TSM4946DCS

Name: TSM4946DCS
Brand: Taiwan Semiconductor
SKU: 1383749
Availability: InStock
Rating: 4.84 (5 reviews)

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Part No	TSM4946DCS
Manufacturer	Taiwan Semiconductor
Catalog	FETs - Arrays
Description	60V, 4.5A, DUAL N-CHANNEL POWER / Mosfet Array 60V 4.5A (Ta) 2.4W (Ta) Surface Mount 8-SOP
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Category	Discrete Semiconductor Products>Transistors>FETs, MOSFETs>FET, MOSFET Arrays
Mfr	Taiwan Semiconductor
Series	-
Package	Tape & Reel (TR)
Technology	MOSFET (Metal Oxide)
Configuration	2 N-Channel
FET Feature	Standard
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	4.5A (Ta)
Rds On (Max) @ Id, Vgs	55mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	910pF @ 24V
Power - Max	2.4W (Ta)
Temperature Range - Operating	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package	8-SOP
Base Product Number	TSM4946
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	5,000 pcs
Win Source Part Number	1383749-TSM4946DCS
Ultra Librarian 3D Model	Ultra Librarian TSM4946DCS CAD Model

Description

The 1200885 is a MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) array manufactured by Taiwan Semiconductor.

Mounting Type: Surface Mount
Package: Tape & Reel (TR)
Channel Type: N-channel
Drain-to-Source Voltage (Vdss): 60V
Continuous Drain Current (Id): 4.5A @ 25°C
Maximum On-Resistance (Rds On): 55mOhm @ 4.5A and 10V gate-to-source voltage (Vgs)
Gate Charge (Qg): 30nC @ 10V
Input Capacitance (Ciss): 910pF @ 24V drain-to-source voltage (Vds)

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