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FMM5059VF

Part No FMM5059VF
Manufacturer Sumitomo Electric
Catalog Custom Parts (E - I)
Description Ku to V-Band, Power Amplifier MMIC, 13.75-14.5GHz, 35dBm, 1600mA
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Win Source Part Number 1206199-FMM5059VF
Categories Custom Parts
Manufacturer Sumitomo Electric
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian FMM5059VF CAD Model

Description

The FMM5059VF from Sumitomo Electric is a Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT). It's designed for high-power, high-efficiency applications, particularly in the microwave frequency range. This transistor is suitable for a variety of uses where power amplification is critical.

Applications:

  • Radar Systems: Used in the transmitter stages of radar systems for both civilian and military applications.
  • Satellite Communication: Employed in satellite communication systems for uplink power amplification.
  • Wireless Infrastructure: Utilized in base stations for cellular and wireless networks.
  • Test and Measurement Equipment: Found in signal generators and power amplifiers for testing and measurement purposes.
  • Electronic Warfare: Can be incorporated into electronic warfare systems for jamming and countermeasure applications.

Features:

  • GaN HEMT Technology: Offers superior performance compared to traditional silicon-based transistors.
  • High Power Output: Capable of delivering significant power for demanding applications.
  • High Efficiency: Minimizes power consumption and heat dissipation.
  • Wideband Operation: Operates effectively over a broad frequency range.
  • Compact Size: Allows for integration into space-constrained environments.

Benefits:

  • Improved System Performance: Enables higher power levels and greater efficiency in radar and communication systems.
  • Reduced Operating Costs: Lower power consumption translates to reduced energy bills.
  • Enhanced Reliability: GaN technology offers improved robustness and longer lifespan compared to silicon.
  • Smaller System Footprint: Compact size facilitates miniaturization of electronic devices.
  • Increased Design Flexibility: Wideband operation allows for use in a variety of applications.

Additional Details:

The FMM5059VF GaN HEMT requires careful thermal management due to its high power density. Proper heat sinking and cooling techniques are essential to ensure reliable operation. The specific electrical characteristics, such as gain, power-added efficiency (PAE), and operating voltage, will vary depending on the specific application and operating conditions. Designers should consult the manufacturer's datasheet for detailed specifications and application guidelines. The device is typically supplied in a hermetically sealed package to ensure long-term reliability and protection from environmental factors.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1+ $435.2179 $435.2179
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Availability: 300 pieces
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