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Manufacturer STMicroelectronics
Win Source Part Number 1280237-W8NB80
Manufacturer Homepage www.st.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian W8NB80 CAD Model

Description

The W8NB80 is a robust power MOSFET transistor designed and manufactured by STMicroelectronics, a leader in semiconductor solutions. This high-voltage power MOSFET is part of ST's STW series, engineered to deliver superior performance in applications requiring efficient power conversion and management.

Key Features

  • High Voltage Capability: The W8NB80 is capable of withstanding voltages up to 800V, making it suitable for high-voltage applications.
  • Low On-Resistance: With its low on-state resistance (R<sub>DS(on)), the device ensures minimal power loss and improved efficiency in electronic circuits.
  • Fast Switching Speed: The transistor is designed for fast switching, which reduces switching losses and is ideal for high-frequency power switching applications.
  • Robust Thermal Performance: The W8NB80 has an excellent thermal performance that allows for stable operation over a wide temperature range.

Applications

The versatility of the W8NB80 makes it suitable for a wide array of applications, including:

  • Switch Mode Power Supplies (SMPS)
  • High-efficiency DC-DC converters
  • Power factor correction circuits
  • Electronic lamp ballasts
  • Motor control circuits

Quality and Reliability

STMicroelectronics is committed to offering products that meet the highest standards of quality and reliability. The W8NB80 is no exception, and it is manufactured in state-of-the-art facilities, ensuring that each component meets ST's rigorous quality control measures.

Environmental Compliance

The W8NB80 is designed with environmental considerations in mind. It complies with various international standards, including RoHS (Restriction of Hazardous Substances), which restricts the use of certain hazardous materials in electronic equipment.

Conclusion

The W8NB80 from STMicroelectronics represents a blend of performance, efficiency, and reliability, suitable for designers who require a high-voltage power MOSFET that can deliver in demanding conditions. Its combination of features ensures that it can be integrated into a wide range of power applications, providing a solution that is both cost-effective and energy-efficient.

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