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STY145N65M5

Part No STY145N65M5
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description N-channel 650 V, 0.012 Ω typ., 138 A, MDmesh™ V Power MOSFET in Max247 package
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Series MDmesh V
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 650V
Current - Continuous Drain (Id) @ 25°C 138A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 414nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 18500pF @ 100V
Vgs (Maximum) ±25V
Power Dissipation (Maximum) 625W (Tc)
Rds On (Maximum) @ Id, Vgs 15 mOhm @ 69A, 10V
Operating Temperature Range 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package MAX247
Package TO-247-3
Win Source Part Number 1262422-STY145N65M5
Manufacturer Homepage www.st.com
Popularity Medium
Supply and Demand Status Limited
Family Name STY145N65M5
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2028
Ultra Librarian 3D Model Ultra Librarian STY145N65M5 CAD Model

Description

STY145N65M5 - Power MOSFET by STMicroelectronics

The STY145N65M5 is a state-of-the-art power MOSFET designed and manufactured by STMicroelectronics, a global leader in semiconductor solutions. This device is part of ST's MDmesh™ M5 series, which features innovative high-voltage super-junction technology that provides outstanding performance in a wide range of applications.

Key Features

  • Breakdown Voltage: The STY145N65M5 boasts a high drain-source breakdown voltage of 650V, making it suitable for high-voltage applications.
  • Low On-Resistance: With an on-resistance of only 0.145 Ohm, this MOSFET ensures high efficiency and low conduction losses, which is critical for power management applications.
  • High Current Capability: The device can handle continuous drain currents up to 100A, providing robust performance for demanding power loads.
  • Reduced Gate Charge: A low gate charge minimizes switching losses, contributing to the overall efficiency of the device when used in high-frequency power switching applications.
  • Enhanced Body Diode: The STY145N65M5 features a fast recovery body diode, which is beneficial for hard switching applications that require efficient diode reverse recovery performance.

Applications

The versatility of the STY145N65M5 allows it to be used in a variety of applications, including:

  • Switch Mode Power Supplies (SMPS)
  • LED Lighting
  • Welding Equipment
  • Solar Inverters
  • Uninterruptible Power Supplies (UPS)
  • High-Performance Drives

Advanced Technology

ST's MDmesh™ M5 technology integrates a vertical structure that optimizes the device's on-state resistance per unit area, which is a critical feature for high-power applications where space and thermal management are limited. The STY145N65M5 is also designed to have a very low gate charge and capacitances, which significantly improves the switching performance and reduces the total power dissipation of the device.

Reliability and Quality

STMicroelectronics is committed to providing products that meet the highest standards of quality and reliability. The STY145N65M5 undergoes rigorous testing and quality control processes to ensure it meets the stringent requirements for industrial and commercial applications. Customers can trust this power MOSFET to deliver consistent performance and durability.

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Pricing & Ordering

Quantity Unit Price Ext. Price
4+ $14.3240 $57.2960
9+ $11.7530 $105.7770
14+ $11.3857 $159.3998
19+ $11.0185 $209.3515
24+ $10.6512 $255.6288
32+ $9.5493 $305.5776
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,700 pieces
MOQ: 4 pcs
Order Increment : 1 pcs
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