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STW32NM50N

Part No STW32NM50N
Manufacturer STMicroelectronics
Catalog FETs - Single
Description N-channel 500 V, 0.1 Ω typ., 22 A MDmesh™ II Power MOSFET in D²PAK, TO-220FP, TO-220, TO-247 packages | MOSFET N CH 500V 22A TO-247
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 500V
Id - Continuous Drain Current 22A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 130mOhm at 11A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 62.5nC at 10V
Gate Source Voltage (Maximum) ±25V
Input Capacitance (Ciss) (Maximum) at Vds 1973pF at 50V
Power Dissipation (Maximum) 190W
Temperature Range - Operating 150°C
Mounting Style Through Hole
Supplier Device Package TO-247
Manufacturer Package TO-247-3
Manufacturer Pack Quantity 30
MSL Level 1 (Unlimited)
Win Source Part Number 1262358-STW32NM50N
Manufacturer Homepage www.st.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian STW32NM50N CAD Model

Description

STW32NM50N - N-Channel 500V - 0.085ohm - 31A MDmesh™ Power MOSFET

The STW32NM50N is a high-performance N-channel Power MOSFET produced using STMicroelectronics' innovative MDmesh™ technology, which combines excellent RDS(on) with reduced gate charge, ensuring high efficiency and reliability for a wide range of applications. This Power MOSFET is designed to meet the stringent requirements of industrial, computing, and telecom applications, providing a perfect blend of low on-resistance and high switching speed.

Key Features:

  • Voltage Rating: With a drain-source voltage (VDS) of 500V, the STW32NM50N is suitable for high voltage applications, ensuring safe operation even under high voltage conditions.
  • Low On-Resistance: The device boasts an ultra-low on-resistance (RDS(on)) of 0.085ohm, which minimizes conduction losses and improves overall efficiency.
  • High Current Capability: With a continuous drain current (ID) of 31A, this MOSFET can handle high current loads, making it ideal for power-intensive applications.
  • Reduced Gate Charge: The reduced gate charge (Qg) results in faster switching performance and reduced switching losses, which is critical for high-frequency power switching applications.
  • 100% Avalanche Tested: Each unit is rigorously tested for avalanche ruggedness, ensuring reliability and robustness in harsh environments.
  • TO-247 Package: The device is housed in a TO-247 package, known for its high power dissipation and ease of mounting, suitable for high power density designs.

Applications:

  • Switching applications for power supply and power management systems.
  • High-performance converters and inverters.
  • Motor drives and controllers for industrial automation.
  • Uninterruptible power supplies (UPS).
  • LED lighting solutions.

The STW32NM50N is a testament to STMicroelectronics' commitment to providing state-of-the-art semiconductor solutions that enhance energy efficiency and thermal performance. It is an ideal choice for designers looking to optimize their power circuits without compromising on performance or reliability.

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Pricing & Ordering

Quantity Unit Price Ext. Price
4+ $14.4788 $57.9152
10+ $11.8801 $118.8010
16+ $11.5088 $184.1408
21+ $11.1376 $233.8896
27+ $10.7664 $290.6928
36+ $9.6526 $347.4936
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 20 pieces
MOQ: 4 pcs
Order Increment : 1 pcs
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