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Manufacturer STMicroelectronics
Packaging Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) at 25°C 21A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 160mOhm at 10.5A, 10V
Vgs(th) (Maximum) at Id 5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 34nC at 10V
Maximum Vgs ±25V
Input Capacitance (Ciss) (Maximum) at Vds 1500pF at 100V
Power Dissipation (Maximum) 170W (Tc)
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-247
Manufacturer Package TO-247-3
Part Number Series STW28N
Manufacturer Pack Quantity 30
MSL Level 1 (Unlimited)
Popularity Medium
Supply and Demand Status Limited
Win Source Part Number 811396-STW28N60DM2
Ultra Librarian 3D Model Ultra Librarian STW28N60DM2 CAD Model

Description

STW28N60DM2 - High Performance MOSFET by STMicroelectronics

The STW28N60DM2 is a state-of-the-art N-channel 600V Power MOSFET, engineered by STMicroelectronics, a global semiconductor leader. This power MOSFET is part of the MDmesh™ DM2 series, which is renowned for its excellent energy efficiency and performance in high-voltage applications.

Featuring a drain-source voltage (V<sub>DS) of 600V, the STW28N60DM2 is designed to handle high voltages efficiently, making it an ideal choice for a wide range of power applications. Its low on-resistance (R<sub>DS(on)) of only 0.165Ω minimizes conduction losses, while its maximum continuous drain current (I<sub>D) of 23A allows for substantial current flow through the device without overheating.

The MOSFET is built using STMicroelectronics' innovative MDmesh DM2 technology, which combines a vertical structure with a new proprietary diffusion process. This technology enables the STW28N60DM2 to achieve low on-resistance and reduced gate charge (Q<sub>g), resulting in lower switching losses. This makes the MOSFET highly suitable for high-efficiency converters and other power switching applications.

With its fast recovery diode, the STW28N60DM2 also provides excellent body diode ruggedness, which is critical for hard-switching applications. Its enhanced dv/dt capability ensures reliability under challenging conditions, and the 100% avalanche tested design guarantees robust performance even during extreme voltage transients.

The STW28N60DM2 comes in a TO-247 package, which is known for its high power dissipation capability. This package ensures that the MOSFET can handle high thermal and electrical loads, making it a reliable choice for industrial, consumer, and computing applications.

Key Features:

  • 600V drain-source voltage (V<sub>DS)
  • Low on-resistance (R<sub>DS(on)) of 0.165Ω
  • Maximum continuous drain current (I<sub>D) of 23A
  • MDmesh DM2 technology for reduced gate charge and low switching losses
  • Fast recovery diode for excellent body diode ruggedness
  • Enhanced dv/dt capability for reliability
  • 100% avalanche tested
  • TO-247 package for high power dissipation

Whether you're designing power supplies, lighting systems, or electronic ballasts, the STW28N60DM2 offers the performance and reliability you need to create efficient, high-performing products.

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Pricing & Ordering

Quantity Unit Price Ext. Price
11+ $5.1334 $56.4674
27+ $4.2120 $113.7240
42+ $4.0804 $171.3768
57+ $3.9488 $225.0816
74+ $3.8172 $282.4728
99+ $3.4223 $338.8077
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
Availability: 2,505 pieces
MOQ: 11 pcs
Order Increment : 1 piece
*Need More Quantity? *Request a Bulk Quantity Quotation?

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