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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 600V
Id - Continuous Drain Current 30A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 135mOhm at 13A, 10V
Gate Source Voltage(th) (Maximum) at Id 5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 102nC at 10V
Gate Source Voltage (Maximum) ±30V
Input Capacitance (Ciss) (Maximum) at Vds 2900pF at 25V
Power Dissipation (Maximum) 313W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-247-3
Manufacturer Package TO-247-3
Manufacturer Pack Quantity 30
MSL Level 1 (Unlimited)
Win Source Part Number 1262356-STW26NM60
Manufacturer Homepage www.st.com
Family Name STW26NM60
Introduction Date February 19, 2002
ECCN EAR99
Country of Origin China, India, Malaysia, Morocco, Philippines, Republic of Korea, Singapore
Estimated EOL Date Obsolete
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian STW26NM60 CAD Model

Description

STW26NM60 - N-Channel 600V - 0.165ohm - 20A - TO-247 Power Mesh II MOSFET

The STW26NM60 is a cutting-edge N-Channel Power MOSFET presented by STMicroelectronics, a global semiconductor leader known for its advanced and reliable components. This MOSFET is part of the Power Mesh II series that boasts state-of-the-art technology designed to deliver superior switching performance and enhanced power handling capabilities.

With a drain-source voltage of 600V, the STW26NM60 ensures a high voltage threshold suitable for various demanding applications. It features an ultra-low on-resistance of 0.165 ohm, which significantly reduces conduction losses, making it an excellent choice for high-efficiency solutions. The device is capable of handling a continuous drain current of up to 20A, providing ample current for a wide range of power requirements.

The STW26NM60 is housed in a robust TO-247 package, which not only offers excellent thermal performance but also ensures mechanical ruggedness for industrial-grade applications. This package is widely recognized for its ability to handle high power levels and its ease of mounting on a heatsink, which is critical for maintaining device longevity and reliability under high thermal conditions.

One of the key features of the STW26NM60 is its very low intrinsic capacitance, which results in reduced switching losses. This characteristic, combined with the fast recovery diode, makes it an ideal choice for high-frequency applications such as switch-mode power supplies, power factor correction circuits, and electronic lamp ballasts.

STMicroelectronics has integrated several protective features into the STW26NM60, including a Zener-protected gate that helps to withstand high voltage spikes and transients commonly found in industrial environments. This level of protection ensures a longer operational life and increased reliability of the device in the field.

In summary, the STW26NM60 from STMicroelectronics is a high-performance, N-Channel Power MOSFET that offers a blend of efficiency, power handling, and protection, making it a top choice for designers looking to optimize their power management systems.

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