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STU2N62K3

Part No STU2N62K3
Manufacturer STMicroelectronics
Catalog FETs - Single
Description MOSFET N-CH 620V 2.2A IPAK / N-channel 620 V, 3 ohm, 2.2 A SuperMESH3 Power MOSFET
Sample
Rohs State rohs
ECAD Module
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Manufacturer STMicroelectronics
Packaging Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 620V
Current - Continuous Drain (Id) at 25°C 2.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 3.6Ohm at 1.1A, 10V
Vgs(th) (Maximum) at Id 4.5V at 50μA
Gate Charge (Qg) (Maximum) at Vgs 15nC at 10V
Maximum Vgs ±30V
Input Capacitance (Ciss) (Maximum) at Vds 340pF at 50V
Power Dissipation (Maximum) 45W (Tc)
Temperature Range - Operating 150°C
Mounting Style Through Hole
Supplier Device Package I-PAK
Manufacturer Package TO-251-3 Short Leads, IPak, TO-251AA
Part Number Series STU2N
Manufacturer Pack Quantity 75
MSL Level 1 (Unlimited)
Popularity Medium
Supply and Demand Status Balance
Win Source Part Number 808540-STU2N62K3
Ultra Librarian 3D Model Ultra Librarian STU2N62K3 CAD Model

Description

The STU2N62K3 is a high-performance N-channel Power MOSFET produced by STMicroelectronics, a leader in semiconductor solutions. This device is part of the SuperMESH3™ Power MOSFET family, which is renowned for its exceptional efficiency and thermal performance. The STU2N62K3 is designed to handle high voltages up to 620V with a low on-resistance of 2.4 Ω typical, providing a current capacity of 2 A.

Encased in a robust DPAK package, the STU2N62K3 is engineered for applications requiring high-density power management. Its advanced technology ensures reduced conduction losses and improved switching performance, making it an ideal choice for high-efficiency power supplies, lighting applications, specifically LED lighting, and electronic ballasts, as well as for switch-mode power supplies (SMPS).

Key features of the STU2N62K3 include:

  • Breakdown Voltage (VBRDSS): 620 V
  • Continuous Drain Current (ID): 2 A
  • On-resistance (RDS(on)): 2.4 Ω typical
  • Low gate charge (Qg)
  • Low input capacitance (Ciss)
  • 100% avalanche tested
  • High dv/dt and avalanche capabilities
  • High frequency operation

The STU2N62K3 also boasts a high level of reliability, with features such as 100% avalanche testing which ensures ruggedness against unexpected voltage spikes. The device's high dv/dt capability makes it resilient in fast-switching scenarios, while its low gate charge and input capacitance contribute to reduced switching losses, thus promoting energy efficiency.

STMicroelectronics' commitment to environmental sustainability is evident in the STU2N62K3, which is compliant with RoHS and Halogen-Free directives. This ensures that the product is suitable for use in environmentally sensitive applications and aligns with global efforts to reduce hazardous substances in electronic components.

Whether you're designing for industrial, consumer, or lighting applications, the STU2N62K3 offers a powerful, efficient, and reliable solution that meets the stringent requirements of modern electronic circuits.

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $0.9076 $54.4560
135+ $0.7447 $100.5345
210+ $0.7214 $151.4940
290+ $0.6982 $202.4780
375+ $0.6749 $253.0875
500+ $0.6051 $302.5500
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,998 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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