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STU16N60M2

Part No STU16N60M2
Manufacturer STMicroelectronics
Catalog FETs - Single
Description Extremely low gate charge | MOSFET N-CH 600V 12A IPAK
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 600V
Id - Continuous Drain Current 12A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 320mOhm at 6A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 19nC at 10V
Gate Source Voltage (Maximum) ±25V
Input Capacitance (Ciss) (Maximum) at Vds 700pF at 100V
Power Dissipation (Maximum) 110W
Temperature Range - Operating 150°C
Mounting Style Through Hole
Supplier Device Package IPAK (TO-251)
Manufacturer Package TO-251-3 Short Leads, IPak, TO-251AA
Manufacturer Pack Quantity 75
MSL Level 1 (Unlimited)
Win Source Part Number 1262231-STU16N60M2
Manufacturer Homepage www.st.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian STU16N60M2 CAD Model

Description

STU16N60M2 - High Performance N-channel Power MOSFET

The STU16N60M2 is a state-of-the-art N-channel Power MOSFET brought to you by STMicroelectronics, a global semiconductor leader known for its commitment to delivering innovative and sustainable solutions. This particular MOSFET is designed to meet a wide range of applications, offering high efficiency and reliability in power management tasks.

Key Features

  • High Voltage Capability: The STU16N60M2 operates at 600V, making it suitable for high voltage applications.
  • Low On-Resistance: With an RDS(on) value that ensures minimal power loss and higher efficiency during operation.
  • Fast Switching Speed: The device is designed for applications requiring fast switching to improve overall system efficiency.
  • Improved Gate Charge: The optimized gate charge allows for better switching performance and reduced switching losses.
  • 100% Avalanche Tested: Guarantees robustness and reliability of the MOSFET in real-world applications.
  • Enhanced Body Diode: Features a low reverse recovery charge which minimizes stress during switching and reverse conditions.

Applications

The versatility of the STU16N60M2 makes it an ideal choice for a broad range of applications, including:

  • Switch Mode Power Supplies (SMPS)
  • LED Lighting Systems
  • High Efficiency DC-DC Converters
  • Motor Control Applications
  • Power Factor Correction Circuits
  • Hard Switching and Resonant Mode Power Supplies

Quality and Environmental Compliance

STMicroelectronics is dedicated to not only meeting but exceeding quality and environmental standards. The STU16N60M2 complies with the highest industry standards for performance and reliability, including RoHS and Reach compliance, ensuring that it is free from harmful substances and suitable for use in environmentally sensitive applications.

With the STU16N60M2, engineers and designers can expect a robust and efficient component that will enhance the performance of their power management systems, while also contributing to a sustainable future.

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