The STPSC10H065B-TR from STMicroelectronics is a state-of-the-art Silicon Carbide (SiC) Power Schottky Diode, designed to offer superior switching performance and higher reliability compared to Silicon devices. This diode is part of ST's SiC diode series that are optimized for high-frequency power electronics applications, including PFC (Power Factor Correction), solar inverters, and EV/HEV (Electric Vehicle/Hybrid Electric Vehicle) charging systems.

Key Features

• No Reverse Recovery Charge: The diode features zero reverse recovery charge, which makes it highly efficient for switching applications and reduces switching losses significantly.
• High Surge Current Capability: Engineered for robustness, the STPSC10H065B-TR can withstand high surge currents, ensuring reliability under harsh conditions.
• Temperature Independent Switching Behavior: Unlike Silicon-based diodes, the switching performance of this SiC diode remains consistent across a wide temperature range, enhancing system performance and reliability.
• Low Forward Voltage Drop: The device exhibits a very low forward voltage drop that translates into reduced conduction losses and improved system efficiency.

Applications

The STPSC10H065B-TR is suitable for a wide range of high-performance applications, including:

• Switch Mode Power Supplies (SMPS)
• Power Factor Correction (PFC) circuits
• Solar Inverters
• DC-DC Converters
• Electric Vehicle (EV) Charging Stations
• Uninterruptible Power Supplies (UPS)

Product Specifications

Parameter Value Repetitive Peak Reverse Voltage (V<sub>RRM) 650V Average Forward Current (I<sub>F(AV)) 10A Package TO-220AB Operating Junction Temperature (T<sub>j) -40°C to +175°C

Overall, the STPSC10H065B-TR is a powerful and efficient solution for designers looking to improve system performance while reducing energy consumption and heat dissipation in a compact form factor.