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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 650V
Id - Continuous Drain Current 6.4A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 1.2Ohm at 3.2A, 10V
Gate Source Voltage(th) (Maximum) at Id 4.5V at 100μA
Gate Charge (Qg) (Maximum) at Vgs 41nC at 10V
Gate Source Voltage (Maximum) ±30V
Input Capacitance (Ciss) (Maximum) at Vds 1145pF at 25V
Power Dissipation (Maximum) 125W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-220AB
Manufacturer Package TO-220-3
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1261811-STP9NK65Z
Manufacturer Homepage www.st.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian STP9NK65Z CAD Model

Description

STP9NK65Z - STMicroelectronics Power MOSFET

The STP9NK65Z is a high-performance N-channel Power MOSFET produced by STMicroelectronics, a leading name in the semiconductor industry. This particular MOSFET is part of the MDmesh™ K5 series, which is well-known for its extremely low on-resistance and high switching speed. The STP9NK65Z is designed to deliver efficiency and reliability for a wide range of applications, including switch-mode power supplies, LED lighting, DC-AC converters, and motor control systems.

With a drain-source voltage (V<sub>DS) of 650V, the STP9NK65Z can handle high voltage operations, making it suitable for power applications that require a robust and durable component. The device features a continuous drain current (I<sub>D) of 7A, which allows it to manage significant power without overheating. Its low threshold voltage ensures that it can be driven by low-voltage control signals, offering flexibility in circuit design.

The STP9NK65Z utilizes STMicroelectronics' innovative Zener-protected SuperMESH™ technology, which provides enhanced ESD immunity and safeguards the device from damage due to electrostatic discharges. This feature is particularly beneficial in environments where ESD events are a concern, helping to extend the lifespan of the product.

One of the key advantages of the STP9NK65Z is its very low gate charge (Q<sub>g), which translates to reduced switching losses and improved overall efficiency. Additionally, the MOSFET's low input capacitance (C<sub>iss) minimizes driver power dissipation and further enhances its performance in high-frequency applications.

The STP9NK65Z is available in a TO-220 package, which is widely used and recognized for its ease of mounting and excellent thermal performance. This package allows for efficient heat dissipation, ensuring that the MOSFET operates within its specified temperature range even under high load conditions.

In summary, the STP9NK65Z from STMicroelectronics is a high-voltage, high-performance Power MOSFET that offers designers a combination of efficiency, reliability, and protection features. Its robust design and advanced technology make it an excellent choice for a variety of power management applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
20+ $2.5417 $50.8340
48+ $2.0855 $100.1040
75+ $2.0204 $151.5300
103+ $1.9552 $201.3856
133+ $1.8900 $251.3700
178+ $1.6945 $301.6210
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
Availability: 7,698 pieces
MOQ: 20 pcs
Order Increment : 1 piece
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