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STP6NK70Z

Part No STP6NK70Z
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL 700V - 1.5ohm - 5A TO-220/TO-220FP Zener-Protected SuperMESH MOSFET
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Series SuperMESH
Packaging Tube
Part Status Obsolete(EOL)
Channel Type Type N
Technology MOSFET
Drain Source Voltage 700V
Current - Continuous Drain (Id) @ 25°C 5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4.5V @ 100μA
Gate Charge (Qg) (Maximum) @ Vgs 47nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 930pF @ 25V
Vgs (Maximum) ±30V
Power Dissipation (Maximum) 110W (Tc)
Rds On (Maximum) @ Id, Vgs 1.8 Ohm @ 2.5A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package TO-220AB
Package TO-220-3
Win Source Part Number 1261780-STP6NK70Z
Manufacturer Homepage www.st.com
Popularity Medium
Supply and Demand Status Limited
Family Name STP6NK70Z
Introduction Date September 24, 2004
ECCN EAR99
Country of Origin China, India, Malaysia, Morocco, Philippines, Republic of Korea
Estimated EOL Date Obsolete
Ultra Librarian 3D Model Ultra Librarian STP6NK70Z CAD Model

Description

The STP6NK70Z is a high-performance Power MOSFET produced by STMicroelectronics, designed to deliver efficient power management and conversion for a wide array of applications. This device is part of ST's MDmesh™ series, which is renowned for its excellent on-state resistance (RDS(on)) and superior switching performance, making it a prime choice for high-efficiency solutions.

Key Features

  • High Voltage Capability: The STP6NK70Z is capable of handling voltages up to 700V, making it suitable for high voltage applications that require reliable switching and power control.
  • Low On-Resistance: With its low on-state resistance, this MOSFET minimizes power loss during operation, which is crucial for energy-sensitive circuits.
  • Reduced Gate Charge: The device's gate charge is optimized to reduce switching losses, providing more efficient operation at high frequencies.
  • Zener-Protected: The gate-source of this MOSFET is protected with an integrated Zener diode, safeguarding against electrostatic discharge and enhancing its ruggedness.
  • 100% Avalanche Tested: Each unit is guaranteed to withstand repetitive avalanche events, ensuring reliability and long-term stability in harsh conditions.

Applications

The versatility of the STP6NK70Z makes it an excellent choice for a variety of power applications, including:

  • Switching power supplies
  • Power converters
  • Motor control circuits
  • Lighting and LED drivers
  • High-performance computing systems

Technical Specifications

Parameter Value
Drain-source Voltage (VDS) 700V
Continuous Drain Current (ID) 5.8A
Power Dissipation (PD) 125W
Operating Temperature Range -55°C to 150°C

With its robust design and high efficiency, the STP6NK70Z by STMicroelectronics stands out as a reliable component for designers and engineers looking to optimize their power management systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.6320 $65.2800
90+ $1.3398 $120.5820
135+ $1.2982 $175.2570
185+ $1.2555 $232.2675
240+ $1.2139 $291.3360
320+ $1.0880 $348.1600
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 50 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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