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STP30NM60N

Part No STP30NM60N
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description N-channel 600 V, 0.1 Ω, 25 A, MDmesh™ II Power MOSFET TO-220, TO-220FP, TO-247, D2PAK, I2PAK
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Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Series MDmesh II
Packaging Tube
Part Status Obsolete(EOL)
Channel Type Type N
Technology MOSFET
Drain Source Voltage 600V
Current - Continuous Drain (Id) @ 25°C 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 91nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 2700pF @ 50V
Vgs (Maximum) ±30V
Power Dissipation (Maximum) 190W (Tc)
Rds On (Maximum) @ Id, Vgs 130 mOhm @ 12.5A, 10V
Operating Temperature Range 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package TO-220AB
Package TO-220-3
Win Source Part Number 1261716-STP30NM60N
Manufacturer Homepage www.st.com
Popularity Medium
Supply and Demand Status Limited
Family Name STP30NM60N
Introduction Date October 23, 2007
ECCN EAR99
Country of Origin China, India, Malaysia, Morocco, Philippines, Republic of Korea, Singapore
Estimated EOL Date Obsolete
Ultra Librarian 3D Model Ultra Librarian STP30NM60N CAD Model

Description

The STP30NM60N is a high-performance N-channel Power MOSFET produced by STMicroelectronics, a renowned global semiconductor company. This Power MOSFET is designed to deliver efficiency and reliability for a wide range of applications, including switching power supplies, motor control, and power management systems.

Key Features

  • Voltage Rating: The STP30NM60N boasts a drain-source voltage (V<sub>DS) of 600V, making it suitable for high voltage applications.
  • Current Capacity: With a continuous drain current (I<sub>D) of 30A, this MOSFET can handle significant power levels.
  • Low On-Resistance: The device features an on-resistance (R<sub>DS(on)) of 0.125Ω, which enhances its efficiency by minimizing conduction losses.
  • Fast Switching Speed: Its fast switching capability ensures that the STP30NM60N can operate efficiently at high frequencies, which is crucial for power conversion applications.
  • High Avalanche Ruggedness: Designed to withstand high energy pulses in the avalanche and commutation modes, this MOSFET is robust and reliable for demanding situations.

Applications

The versatility of the STP30NM60N allows it to be used in a variety of applications, some of which include:

  • Switch Mode Power Supplies (SMPS)
  • Uninterruptible Power Supplies (UPS)
  • High-efficiency DC-DC converters
  • Motor control circuits
  • LED lighting solutions

Package and Quality

The STP30NM60N comes in a TO-220 package, which is widely used and easy to mount on various types of printed circuit boards. This package provides a good balance between thermal performance and size, making it suitable for compact designs without compromising on thermal management.

STMicroelectronics is committed to delivering high-quality products. The STP30NM60N is no exception, and it complies with the stringent standards set by the industry, ensuring reliability and performance consistency.

For detailed specifications and application guidelines, designers and engineers are encouraged to consult the STP30NM60N datasheet and application notes provided by STMicroelectronics.

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