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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 100V
Id - Continuous Drain Current 180A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 3.2mOhm at 60A, 10V
Gate Source Voltage(th) (Maximum) at Id 4.5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 176nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 12600pF at 25V
Power Dissipation (Maximum) 300W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style Through Hole
Supplier Device Package TO-220
Manufacturer Package TO-220-3
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1261704-STP240N10F7
Manufacturer Homepage www.st.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian STP240N10F7 CAD Model

Description

STP240N10F7 - N-channel 100 V, 2 mOhm typ., 240 A STripFET™ F7 Power MOSFET in TO-220 package

The STP240N10F7 is a high-performance N-channel Power MOSFET brought to you by STMicroelectronics, a leader in semiconductor solutions. This MOSFET is part of the STripFET F7 series that is known for its low on-resistance and low gate charge, making it an excellent choice for high-efficiency power conversion applications.

With a drain-source voltage (V<sub>DS) of 100 V, the STP240N10F7 is well-suited for a variety of applications that require high voltage operation. Its low on-resistance of 2 mOhm (typical) ensures minimal power loss and superior efficiency, which is critical for energy-sensitive designs. This MOSFET can handle a continuous drain current (I<sub>D) of up to 240 A, making it capable of supporting high current loads without compromising performance.

The device is housed in a robust TO-220 package, which is widely used and recognized for its ability to handle significant power levels and its ease of mounting on printed circuit boards. The TO-220 package also provides excellent thermal performance, ensuring that the MOSFET operates within its temperature specifications even under high power conditions.

One of the key features of the STP240N10F7 is its low gate charge (Q<sub>g), which translates to faster switching speeds and reduced switching losses. This feature is particularly beneficial in applications such as DC-DC converters, motor drives, and other power management tasks where efficiency is paramount.

Additionally, the MOSFET's 100% avalanche tested design guarantees reliable operation in the event of extreme conditions, providing an extra layer of protection for your circuitry. With these specifications, the STP240N10F7 is an excellent choice for designers looking to optimize power density and efficiency in their next project.

STMicroelectronics' commitment to quality and performance is evident in the STP240N10F7 MOSFET, making it a top choice for engineers and professionals seeking a robust and efficient power switching solution.

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Pricing & Ordering

Quantity Unit Price Ext. Price
22+ $2.6454 $58.1988
52+ $2.1707 $112.8764
80+ $2.1028 $168.2240
111+ $2.0350 $225.8850
143+ $1.9672 $281.3096
191+ $1.7637 $336.8667
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
Availability: 8,562 pieces
MOQ: 22 pcs
Order Increment : 1 piece
*Need More Quantity? *Request a Bulk Quantity Quotation?

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