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STI33N60M2

Part No STI33N60M2
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description N-channel 600 V, 0.108 typ., 26 A MDmesh II Plus low Qg Power MOSFETs in TO-220FP, I2PAK, TO-220 and TO-247 packages
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Series MDmesh II Plus
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 600V
Current - Continuous Drain (Id) @ 25°C 26A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 45.5nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 1781pF @ 100V
Vgs (Maximum) ±25V
Power Dissipation (Maximum) 190W (Tc)
Rds On (Maximum) @ Id, Vgs 125 mOhm @ 13A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package I2PAK (TO-262)
Package TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 1261096-STI33N60M2
Manufacturer Homepage www.st.com
Popularity Medium
Supply and Demand Status Limited
Family Name STI33N60M2
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2028
Ultra Librarian 3D Model Ultra Librarian STI33N60M2 CAD Model

Description

STI33N60M2 - STMicroelectronics N-channel MOSFET

The STI33N60M2 is a state-of-the-art N-channel Power MOSFET produced by STMicroelectronics, designed to deliver high efficiency and reliability for a wide range of applications. This MOSFET is part of STMicroelectronics' MDmesh™ M2 series and is particularly suitable for high-performance power conversion applications.

Key Features

  • High Voltage Capability: With a drain-source voltage (VDS) of 600V, the STI33N60M2 is ideal for handling high voltage operations, making it perfect for industrial, computing, and consumer applications.
  • Low On-Resistance: The device boasts an extremely low on-resistance (RDS(on)), which enhances its overall efficiency by reducing conduction losses.
  • High Current Rating: It has a continuous drain current (ID) of 33A, allowing it to handle significant power levels for a variety of demanding tasks.
  • Enhanced Switching Performance: The fast switching speed of the STI33N60M2 minimizes switching losses and improves performance in high-frequency power switching applications.
  • Reduced Gate Charge: A low gate charge (Qg) makes it easier to drive the MOSFET, leading to a reduction in the power needed for gate driving circuits.
  • 100% Avalanche Tested: Guarantees robustness and reliability by ensuring the device can withstand high-energy pulses in avalanche and commutation modes.

Applications

The versatile characteristics of the STI33N60M2 make it an excellent choice for a variety of applications, including:

  • Switch Mode Power Supplies (SMPS)
  • LED Lighting
  • Welding Equipment
  • Uninterruptible Power Supplies (UPS)
  • High-Frequency Converters
  • Power Factor Correction Circuits

Package and Quality

Encapsulated in a TO-220 package, the STI33N60M2 ensures a compact footprint while providing excellent thermal performance. STMicroelectronics' commitment to quality is reflected in the product's compliance with international standards, ensuring that customers receive a reliable and high-performing component for their power management solutions.

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Pricing & Ordering

Quantity Unit Price Ext. Price
10+ $6.2562 $62.5620
23+ $5.1333 $118.0659
35+ $4.9730 $174.0550
48+ $4.8126 $231.0048
63+ $4.6521 $293.0823
84+ $4.1709 $350.3556
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,990 pieces
MOQ: 10 pcs
Order Increment : 1 pcs
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