STH240N10F7-2 Power MOSFET by STMicroelectronics
The STH240N10F7-2 is a state-of-the-art N-channel Power MOSFET designed by the renowned semiconductor manufacturer STMicroelectronics. This high-performance component is part of STMicroelectronics' STripFET™ F7 series, which is known for its excellent switching performance and improved energy efficiency. The STH240N10F7-2 is ideally suited for a wide range of power applications, including but not limited to, power supplies, motor control, and automotive systems.
Key Features:
- Low On-Resistance: The STH240N10F7-2 boasts an exceptionally low on-resistance (R<sub>DS(on)) of only 9.5 mΩ max, contributing to its high efficiency and reduced power losses during operation.
- High Current Capability: With a continuous drain current (I<sub>D) of up to 180 A, this MOSFET can handle high current applications with ease, making it an ideal choice for demanding environments.
- Enhanced Power Density: The device is encapsulated in a compact and robust PowerFLAT 5x6 dual-side cooling package, which allows for excellent thermal performance and power density.
- 100% Avalanche Tested: Ensuring reliability and robustness, each unit is rigorously tested for avalanche energy withstanding, giving designers confidence in their power circuitry.
Applications:
- Switch Mode Power Supplies (SMPS)
- DC/DC Converters
- Motor Control Circuits
- Automotive Applications
- High Current Switching
The STH240N10F7-2 incorporates advanced silicon technology, providing an optimized balance between on-state voltage and switching speed. This balance ensures that the MOSFET can deliver high performance while maintaining efficiency in power conversion processes.
Designers and engineers can leverage the STH240N10F7-2's robustness and efficiency to build more compact, lighter, and energy-saving electronic products. With its exceptional electrical characteristics and thermal performance, the STH240N10F7-2 from STMicroelectronics is a powerful and reliable component for next-generation power electronic designs.
