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STH175N4F6-2AG

Part No STH175N4F6-2AG
Manufacturer STMicroelectronics
Catalog FETs - Single
Description Very low on-resistance | MOSFET N-CH 40V 120A H2PAK-2
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Reel
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 40V
Id - Continuous Drain Current 120A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 2.4mOhm at 60A, 10V
Gate Source Voltage(th) (Maximum) at Id 4.5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 130nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 7735pF at 20V
Power Dissipation (Maximum) 150W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style SMD
Supplier Device Package H2Pak-2
Manufacturer Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Win Source Part Number 1261068-STH175N4F6-2AG
Manufacturer Homepage www.st.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian STH175N4F6-2AG CAD Model

Description

The STH175N4F6-2AG is a high-performance, N-channel Power MOSFET designed and manufactured by the renowned semiconductor company, STMicroelectronics. This robust component is part of ST's STripFET F6 series, which is known for its low on-state resistance and high switching performance. The STH175N4F6-2AG is an ideal choice for a wide range of power applications, including but not limited to, DC-DC converters, motor control, and power management solutions.

Key Features

  • Low On-Resistance: The device boasts an exceptionally low on-state resistance (RDS(on)) of just 1.75 mΩ at VGS = 10 V, which significantly reduces conduction losses and enhances efficiency in power circuits.
  • High Current Capability: With a continuous drain current (ID) of 120 A, the STH175N4F6-2AG can handle high current loads, making it suitable for demanding applications.
  • High Switching Performance: The fast switching characteristics of this MOSFET allow for better performance in applications that require quick transitions, such as switching power supplies and PWM circuits.
  • 100% Avalanche Tested: Ensuring reliability and robustness, this device has been rigorously tested for avalanche breakdown, which is critical for applications subject to high voltage transients.

Applications

  • Switch Mode Power Supplies (SMPS)
  • DC/DC Converters
  • Motor Control Systems
  • Power Management Circuits
  • Automotive Applications

Package and Environmental Compliance

The STH175N4F6-2AG is housed in a highly efficient H2PAK-2 package that provides excellent thermal performance and is suitable for compact designs. Additionally, this product is compliant with the RoHS directive, which restricts the use of certain hazardous substances in electrical and electronic equipment, ensuring an environmentally friendly solution for modern electronic systems.

Conclusion

The STH175N4F6-2AG from STMicroelectronics is a testament to the company's commitment to providing high-quality and energy-efficient power MOSFETs. With its low on-resistance, high current capacity, and fast switching speeds, this device is engineered to meet the rigorous demands of a wide range of power applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.5980 $63.9200
90+ $1.3112 $118.0080
140+ $1.2703 $177.8420
190+ $1.2293 $233.5670
245+ $1.1883 $291.1335
330+ $1.0654 $351.5820
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,000 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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