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STH13NB60FI

Part No STH13NB60FI
Manufacturer STMicroelectronics
Catalog HOT - SALES and EOL Components (S)
Description N - CHANNEL 6V - .48ohm - 13A - TO-247/ISOWATT218 PowerMESH MOSFET
Sample
Rohs State rohs
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Manufacturer STMicroelectronics
Win Source Part Number 087598-STH13NB60FI
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian STH13NB60FI CAD Model

Description

The STH13NB60FI is a high-performance N-Channel Power MOSFET produced by STMicroelectronics, a leader in semiconductor solutions. This MOSFET is part of the SuperMESH™ series, which is well-known for its excellent RDS(on) area ratio and reduced gate charge. These features make the STH13NB60FI an ideal choice for high-efficiency power supplies, lighting applications, and industrial power equipment.

With a robust and rugged design, the STH13NB60FI operates at a 600V breakdown voltage, ensuring it can handle high voltage applications with ease. The low threshold drive and high avalanche capability make it suitable for a variety of switching applications. Its low on-resistance of just 0.3Ω minimizes conduction losses, thereby improving overall energy efficiency.

This Power MOSFET is available in both TO-220 and TO-220FP packages, providing flexibility in mounting and heat dissipation. The TO-220 package is designed for through-hole mounting and is known for its ability to handle higher current levels due to its larger size. On the other hand, the TO-220FP is a thinner package that can be used in applications where space is more constrained.

With a continuous current rating of 13A, the STH13NB60FI can support a substantial amount of current, making it suitable for high-power applications. Its fast switching speed ensures that performance is maintained even under tough conditions. Additionally, the device is 100% avalanche tested, which guarantees robustness and reliability in the field.

STMicroelectronics has designed the STH13NB60FI with an emphasis on reducing electromagnetic interference (EMI), which is critical for maintaining performance in noise-sensitive applications. The MOSFET's inherent body diode exhibits fast recovery characteristics, further enhancing its performance in fast-switching circuits.

In summary, the STH13NB60FI from STMicroelectronics is a powerful and reliable component for designers looking to optimize their power management systems. Its combination of high voltage capability, low on-resistance, and fast switching speed makes it a versatile choice for a wide range of electronic applications.

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