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STGWT60H65FB

Part No STGWT60H65FB
Manufacturer STMicroelectronics
Catalog IGBTs - Single
Description IGBT 650V 80A 375W TO3P-3L
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Features IGBT Trench Field Stop 650 V 80 A 375 W Through Hole TO-3P
Manufacturer STMicroelectronics
Package Tube
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting Through Hole
Package TO-3P-3, SC-65-3
Case / Package TO-3P
Family Name STGWT60
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number 497-14233-5, -497-14233-5
Quantity per package 30
Popularity High
Supply and Demand Status Balance
Win Source Part Number 898013-STGWT60H65FB
Ultra Librarian 3D Model Ultra Librarian STGWT60H65FB CAD Model

Description

STGWT60H65FB - Advanced Trench Gate Field-Stop IGBT

The STGWT60H65FB, crafted by STMicroelectronics, stands as a cutting-edge trench gate field-stop IGBT, designed to deliver superior efficiency and performance in a wide range of power applications. This IGBT is part of STMicroelectronics' advanced power technology line, which is renowned for its high efficiency, reliability, and ease of integration.

With a maximum collector-emitter voltage of 650V and a continuous collector current of 60A at 25°C, the STGWT60H65FB is capable of handling high power densities while maintaining a low on-state voltage drop. This translates into reduced conduction losses, making it an ideal choice for applications such as motor drives, uninterruptible power supplies (UPS), solar inverters, and welding equipment.

The device's trench gate and field-stop structure not only enhance its performance but also improve its switching characteristics. It boasts a low turn-off switching energy (Eoff) which aids in minimizing switching losses and enhancing overall system efficiency. Furthermore, the STGWT60H65FB features a co-packaged freewheeling diode with a low forward voltage drop, providing additional efficiency benefits in hard-switching applications.

Engineered with robustness in mind, the STGWT60H65FB has a high short-circuit withstand time, offering designers a reliable component that can cope with demanding conditions. Its maximum junction temperature of 175°C provides a significant thermal margin for various operating environments.

STMicroelectronics has packaged the STGWT60H65FB in a TO-247 long leads package, which is widely used in the industry and known for its excellent thermal performance. This package ensures that the device can be easily integrated into a variety of circuit designs while providing exceptional heat dissipation, which is critical for maintaining performance and prolonging the lifespan of the IGBT.

In summary, the STGWT60H65FB from STMicroelectronics is an exceptional power semiconductor device that combines state-of-the-art technology with high efficiency, reliability, and thermal performance. It is a perfect choice for designers looking to optimize their power conversion systems and achieve superior performance in their applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
21+ $2.8214 $59.2494
50+ $2.3151 $115.7550
78+ $2.2428 $174.9384
107+ $2.1704 $232.2328
138+ $2.0981 $289.5378
185+ $1.8810 $347.9850
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,338 pieces
MOQ: 21 pcs
Order Increment : 1 pcs
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