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STGWA40H120F2

Part No STGWA40H120F2
Manufacturer STMicroelectronics
Catalog IGBTs - Single
Description IGBT BIPO 1200V 40A TO247-3  /  IGBT Trench Field Stop 1200 V 80 A 468 W Through Hole TO-247 Long Leads
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - IGBTs - Single
Mfr STMicroelectronics
Package Tube
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 1200 V
Current - Collector (Ic) (Max) 80 A
Current - Collector Pulsed (Icm) 160 A
Vce(on) (Max) @ Vge, Ic 2.6V @ 15V, 40A
Power - Max 468 W
Switching Energy 1mJ (on), 1.32mJ (off)
Input Type Standard
Gate Charge 158 nC
Td (on/off) @ 25°C 18ns/152ns
Test Condition 600V, 40A, 10Ohm, 15V
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247 Long Leads
Base Product Number STGWA40
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 30
Win Source Part Number 1014358-STGWA40H120F2
Ultra Librarian 3D Model Ultra Librarian STGWA40H120F2 CAD Model

Description

STGWA40H120F2 - IGBT Transistor from STMicroelectronics

The STGWA40H120F2 is a state-of-the-art IGBT (Insulated Gate Bipolar Transistor) from STMicroelectronics, designed for high efficiency and robustness in a variety of power applications. This device is part of STMicroelectronics' advanced PowerMESH™ IGBTs which are aimed at providing outstanding performance in terms of both conduction and switching losses, making them ideal for energy-saving and environmentally friendly solutions.

The STGWA40H120F2 is characterized by a maximum collector-emitter voltage (V<sub>CE) of 1200V and a continuous collector current (I<sub>C) of 40A at 25°C. This allows the IGBT to handle significant power levels and makes it suitable for applications such as motor drives, uninterruptible power supplies (UPS), solar inverters, and welding equipment.

One of the key features of the STGWA40H120F2 is its low on-state voltage drop (V<sub>CE(sat)) which helps to reduce power dissipation and improve overall system efficiency. Additionally, the device offers a low gate charge (Q<sub>g), which translates into reduced switching losses and faster switching speeds.

The IGBT is housed in a TO-247 long leads package, which provides excellent thermal performance and makes it easier to mount onto heatsinks for enhanced cooling. The package is also designed to handle high levels of mechanical stress, ensuring reliability and a long operational life in demanding environments.

With a co-packaged ultrafast soft recovery anti-parallel diode, the STGWA40H120F2 ensures minimal recovery losses during the diode's turn-off phase. This feature is particularly beneficial in hard-switching applications, where the efficiency of the diode can have a significant impact on the overall performance of the system.

STMicroelectronics has also placed a strong emphasis on safety and reliability with the STGWA40H120F2. The device includes features such as a maximum operating junction temperature (T<sub>j) of 175°C, providing a safety margin for thermal management and ensuring stable operation under a wide range of temperature conditions.

Overall, the STGWA40H120F2 IGBT from STMicroelectronics represents a powerful component for designers looking to optimize their power systems for both performance and efficiency.

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Pricing & Ordering

Quantity Unit Price Ext. Price
6+ $10.7930 $64.7580
14+ $8.8558 $123.9812
21+ $8.5791 $180.1611
28+ $8.3024 $232.4672
36+ $8.0256 $288.9216
49+ $7.1954 $352.5746
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Availability: 4,660 pieces
MOQ: 6 pcs
Order Increment : 1 pcs
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