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STGW60H60DLFB

Part No STGW60H60DLFB
Manufacturer STMicroelectronics
Catalog IGBTs - Single
Description Low thermal resistance
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Maximum) 600V
Current - Collector (Ic) (Maximum) 80A
Current - Collector Pulsed (Icm) 240A
Vce(on) (Maximum) @ Vge, Ic 2V @ 15V, 60A
Power - Max 375W
Switching Energy 626μJ (off)
Input Type Standard
Gate Charge 306nC
Td (on/off) @ 25°C -/160ns
Test Condition 400V, 60A, 5 Ohm, 15V
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting Style Through Hole
Package TO-247-3
Manufacturer Package TO-247
Win Source Part Number 1261053-STGW60H60DLFB
Manufacturer Homepage www.st.com
Popularity Medium
Supply and Demand Status Limited
Family Name STGW60H60DLFB
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2025
Ultra Librarian 3D Model Ultra Librarian STGW60H60DLFB CAD Model

Description

STGW60H60DLFB - STMicroelectronics

The STGW60H60DLFB is a cutting-edge IGBT (Insulated Gate Bipolar Transistor) from STMicroelectronics, designed to meet the demanding needs of modern power electronics. This device is part of STMicroelectronics' high-performance IGBT product line, which is renowned for its efficiency, reliability, and power handling capabilities.

With a collector-emitter voltage of 600V and a continuous collector current of 60A at 25°C, the STGW60H60DLFB is an ideal choice for a wide range of applications, including motor drives, uninterruptible power supplies (UPS), solar inverters, and welding equipment. Its high current rating and robust voltage withstand capability make it suitable for high-power applications where efficiency and thermal performance are critical.

This IGBT utilizes STMicroelectronics' advanced trench gate field-stop technology, which provides a low on-state voltage drop (V<sub>CE(sat)) and reduced switching losses. These characteristics result in a device that is highly efficient, which helps to minimize energy waste and heat generation, leading to a more compact and cost-effective system design.

The STGW60H60DLFB also features a co-packaged fast recovery diode, which offers additional benefits such as reduced component count and simplified circuit design. This integrated diode is optimized for the device's switching characteristics, ensuring smooth and rapid recovery, which is crucial for minimizing electromagnetic interference (EMI) and enhancing overall system reliability.

STMicroelectronics has engineered the STGW60H60DLFB with robustness in mind. It is capable of withstanding harsh operating conditions and offers a high level of protection against short circuits, thanks to its short-circuit withstand time rating. This makes it a reliable choice for industrial environments where equipment is expected to perform consistently under stress.

Overall, the STGW60H60DLFB represents a balance of performance, efficiency, and durability, making it a top contender for designers looking to optimize their power electronic systems. STMicroelectronics' commitment to quality ensures that this IGBT is a dependable component for any high-power electronic application.

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Pricing & Ordering

Quantity Unit Price Ext. Price
9+ $6.7136 $60.4224
21+ $5.5087 $115.6827
33+ $5.3365 $176.1045
45+ $5.1644 $232.3980
58+ $4.9921 $289.5418
78+ $4.4758 $349.1124
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Availability: 1,500 pieces
MOQ: 9 pcs
Order Increment : 1 pcs
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