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STGW35NC120HD

Part No STGW35NC120HD
Manufacturer STMicroelectronics
Catalog IGBTs - Single
Description IGBT 1200V 60A 235W TO247 / IGBT 1200 V 60 A 235 W Through Hole TO-247-3
Datasheet
Sample
Rohs State rohs
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Category Discrete Semiconductor Products>Transistors - IGBTs - Single
Mfr STMicroelectronics
Series PowerMESH™
Package Tube
Product Status Obsolete
Voltage - Collector Emitter Breakdown (Max) 1200 V
Current - Collector (Ic) (Max) 60 A
Current - Collector Pulsed (Icm) 135 A
Vce(on) (Max) @ Vge, Ic 2.75V @ 15V, 20A
Power - Max 235 W
Switching Energy 1.66mJ (on), 4.44mJ (off)
Input Type Standard
Gate Charge 110 nC
Td (on/off) @ 25°C 29ns/275ns
Test Condition 960V, 20A, 10Ohm, 15V
Reverse Recovery Time (trr) 152 ns
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247-3
Base Product Number STGW35
MSL Level Not Applicable
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names -497-7487-5,STGW35NC120HD-ND,497-7487-5
Standard Package 30
Win Source Part Number 1214715-STGW35NC120HD
Ultra Librarian 3D Model Ultra Librarian STGW35NC120HD CAD Model

Description

STGW35NC120HD - High-Speed IGBT from STMicroelectronics

The STGW35NC120HD is a state-of-the-art Insulated Gate Bipolar Transistor (IGBT) developed by STMicroelectronics, a leader in semiconductor solutions. This high-speed IGBT is designed to handle a wide range of high-power applications, providing engineers with a reliable and efficient component for their designs.

Key Features

  • High Current Capability: The STGW35NC120HD boasts a robust current rating, making it suitable for applications requiring high power handling capabilities.
  • High Switching Speed: Engineered for high-speed switching, this IGBT ensures minimal switching losses, which is critical for efficiency in power conversion systems.
  • Low On-Voltage Drop (VCE(sat)): The device offers a low saturation voltage, reducing on-state power dissipation and improving overall system efficiency.
  • Co-Packaged Diode: It includes a fast and soft recovery anti-parallel diode, which is optimized for minimal recovery time and reduced electromagnetic interference (EMI).

Applications

The STGW35NC120HD is ideal for a wide range of applications, including:

  • Uninterruptible Power Supplies (UPS)
  • High-frequency DC/AC inverters
  • Power Factor Correction (PFC) circuits
  • Welding equipment
  • Inductive heating
  • Motor drives and controls

Technical Specifications

With a maximum collector-emitter voltage (VCE) of 1200V and a collector current rating of 35A, the STGW35NC120HD can handle significant power levels. Its high-speed switching capability, combined with a low thermal resistance, ensures performance reliability even under demanding conditions. The device is also characterized by a maximum junction temperature of 175°C, offering a wide operating temperature range for various environments.

Package and Quality

The STGW35NC120HD comes in a TO-247 long leads package, which is known for its excellent thermal and electrical performance. STMicroelectronics also ensures that this IGBT meets stringent quality standards, providing designers with a component they can trust for their high-power applications.

For detailed technical specifications and application support, visit the STMicroelectronics website or contact their support team for assistance in integrating the STGW35NC120HD into your next project.

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