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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Active
VCEO Maximum Collector-Emitter Breakdown Voltage 1200V
Maximum Current Collector 60A
Collector-emitter saturation voltage(Max) 2.75V @ 15V, 20A
Maximum Power Dissipation 220W
Total Switching Energy(Ets) 1.66mJ (on), 4.44mJ (off)
Input Type Standard
Gate Charge 110nC
Turn-on and Turn-off delay time 29ns/275ns
Testing Conditions 960V, 20A, 10 Ohm, 15V
Reverse Recovery Time (trr) 152ns
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247-3
Win Source Part Number 083509-STGW30NC120HD
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian STGW30NC120HD CAD Model

Description

STGW30NC120HD - High-Speed IGBT by STMicroelectronics

The STGW30NC120HD is a cutting-edge Insulated Gate Bipolar Transistor (IGBT) designed and manufactured by STMicroelectronics, a global leader in semiconductor solutions. This high-speed IGBT is engineered to deliver outstanding performance in a wide array of power applications, particularly excelling in high-frequency operations.

Key Features:

  • High Voltage Capability: The STGW30NC120HD is rated for a collector-emitter voltage of 1200V, making it suitable for high-voltage applications, ensuring efficient operation and robust performance in demanding electrical environments.
  • High Current Rating: With a continuous collector current of 60A at 25°C, this IGBT can handle significant power levels, making it ideal for applications requiring high current handling capabilities.
  • Low On-Voltage Drop (Vce(on)): The device features a low on-state voltage drop, which reduces conduction losses and improves overall efficiency, a crucial factor for energy-sensitive designs.
  • Fast Switching Speed: It offers fast switching speeds, which is beneficial for reducing switching losses, especially in high-frequency power switching applications.
  • Co-Packaged with Free Wheeling Diode: The IGBT comes co-packaged with an anti-parallel diode, providing a convenient and compact solution for designs that require a freewheeling diode for inductive load applications.
  • High Ruggedness: The STGW30NC120HD is designed to withstand harsh conditions and is characterized by its high ruggedness, ensuring reliability and a long operational lifespan.
  • Low Gate Charge: The device features a low gate charge, which minimizes the energy required to turn the transistor on and off, contributing to the overall efficiency of the system.

Applications:

The STGW30NC120HD is versatile and can be used in a variety of power applications, such as:

  • Uninterruptible Power Supplies (UPS)
  • High-Frequency Inverters
  • Power Factor Correction (PFC) circuits
  • Induction Heating Systems
  • Welding Equipment
  • Switched Mode Power Supplies (SMPS)

STMicroelectronics' commitment to innovation is evident in the STGW30NC120HD, which offers a blend of high performance, efficiency, and reliability, making it an excellent choice for designers looking to optimize their power management systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
11+ $5.3334 $58.6674
26+ $4.3762 $113.7812
40+ $4.2394 $169.5760
55+ $4.1027 $225.6485
71+ $3.9659 $281.5789
95+ $3.5557 $337.7915
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
Availability: 6,000 pieces
MOQ: 11 pcs
Order Increment : 1 piece
*Need More Quantity? *Request a Bulk Quantity Quotation?

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