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STGP8M120DF3

Part No STGP8M120DF3
Manufacturer STMicroelectronics
Catalog IGBTs - Single
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - IGBTs - Single
Mfr STMicroelectronics
Package Tube
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 1200 V
Current - Collector (Ic) (Max) 16 A
Current - Collector Pulsed (Icm) 32 A
Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 8A
Switching Energy 390µJ (on), 370µJ (Off)
Input Type Standard
Gate Charge 32 nC
Td (on/off) @ 25°C 20ns/126ns
Test Condition 600V, 8A, 33Ohm, 15V
Reverse Recovery Time (trr) 103 ns
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220
Base Product Number STGP8
Standard Package 1,000
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277394-STGP8M120DF3
Ultra Librarian 3D Model Ultra Librarian STGP8M120DF3 CAD Model

Description

The STGP8M120DF3 is a state-of-the-art IGBT (Insulated Gate Bipolar Transistor) developed by STMicroelectronics, a leader in semiconductor solutions. This high-performance transistor is designed to meet the demands of modern electronic applications, offering a perfect blend of efficiency and reliability.

Key Features

  • Voltage Rating: The STGP8M120DF3 is rated for a maximum collector-emitter voltage of 1200V, making it suitable for high-voltage applications.
  • Current Capacity: With a continuous collector current rating of 8A at 25°C, it can handle significant power for a range of electronic circuits.
  • Low On-State Voltage: The device features a low on-state voltage drop, which enhances its efficiency by minimizing conduction losses.
  • High-Speed Switching: It boasts high-speed switching capabilities, which is essential for reducing switching losses and improving performance in applications like inverters and converters.
  • Short-Circuit Rating: The STGP8M120DF3 has a robust short-circuit rating, providing reliable operation and protection against sudden electrical faults.
  • Co-Packaged Diode: This IGBT includes a free-wheeling diode co-packaged with the transistor, which offers a convenient and compact solution for managing reverse recovery in inductive loads.

Applications

The STGP8M120DF3 is ideal for a wide range of high-efficiency applications, including:

  • Switch Mode Power Supplies (SMPS)
  • Uninterruptible Power Supplies (UPS)
  • Motor Drives
  • Power Factor Correction (PFC) circuits
  • Induction Heating
  • Renewable Energy Inverters

Reliability and Quality

STMicroelectronics is committed to delivering products with the highest standards of quality and reliability. The STGP8M120DF3 is no exception, undergoing rigorous testing and quality control processes to ensure it meets the stringent requirements of industrial and consumer electronic devices.

Environmentally Conscious

Aligned with global environmental standards, the STGP8M120DF3 is designed with eco-friendly considerations, complying with RoHS and other regulations to minimize its ecological footprint.

Whether you are designing energy-efficient power supplies or robust motor control systems, the STGP8M120DF3 from STMicroelectronics offers the performance, durability, and efficiency needed to power your innovations.

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