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STGFL6NC60DI

Part No STGFL6NC60DI
Manufacturer STMicroelectronics
Catalog IGBTs - Single
Description IGBT 600V 7A 22W TO220FP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Obsolete(EOL)
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 7A
Pulsed Collector Current 18A
Collector-emitter saturation voltage(Max) 2.9V @ 15V, 3A
Maximum Power Dissipation 22W
Total Switching Energy(Ets) 32μJ (on), 24μJ (off)
Input Type Standard
Gate Charge 12nC
Turn-on and Turn-off delay time 6.7ns/46ns
Testing Conditions 390V, 3A, 10 Ohm, 15V
Reverse Recovery Time (trr) 23ns
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220FP
Win Source Part Number 1103029-STGFL6NC60DI
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian STGFL6NC60DI CAD Model

Description

STGFL6NC60DI - N-channel 600V - 6A - TO-220FP Very Fast Powermesh™ IGBT

The STGFL6NC60DI is a state-of-the-art N-channel IGBT produced by STMicroelectronics, which is renowned for its high efficiency and performance in power electronics. This IGBT is designed to handle a wide range of applications, particularly those requiring fast switching and robustness, such as motor drives, uninterruptible power supplies (UPS), and general-purpose inverters.

With a maximum collector-emitter voltage (VCE) of 600V and a collector current rating of 6A, the STGFL6NC60DI is well-suited for high voltage applications that demand reliability and energy savings. The device is housed in a TO-220FP package, which ensures good thermal performance and ease of mounting on a heatsink.

One of the key features of the STGFL6NC60DI is its Very Fast Powermesh™ technology. This technology is designed to minimize on-state resistance (RDS(on)) and gate charge (Qg), leading to reduced conduction and switching losses. As a result, the IGBT offers superior switching performance, which translates to improved efficiency in the end application.

Additionally, the STGFL6NC60DI is equipped with a co-packaged fast recovery diode. This integrated diode provides protection against reverse voltage and reduces the need for external components, simplifying circuit design and enhancing system reliability.

The device also features a maximum operating junction temperature of 150°C, allowing it to maintain stable performance even under high temperature operating conditions. This high thermal capability is essential for applications that are subjected to harsh environments or that require extended operation without overheating.

With its robust design and advanced technology, the STGFL6NC60DI from STMicroelectronics is an excellent choice for designers looking to optimize their power electronic systems for both performance and cost-effectiveness.

For further information, datasheets, and support resources, customers can visit the STMicroelectronics website or contact their local sales office.

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