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STGE50NC60VD

Part No STGE50NC60VD
Manufacturer STMicroelectronics
Catalog IGBTs - Modules
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - IGBTs - Modules
Mfr STMicroelectronics
Series PowerMESH™
Package Tube
Product Status Obsolete
Configuration Single
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 90 A
Power - Max 260 W
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 40A
Current - Collector Cutoff (Max) 150 µA
Input Capacitance (Cies) @ Vce 4.55 nF @ 25 V
Input Standard
NTC Thermistor No
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Chassis Mount
Package / Case SOT-227-4, miniBLOC
Supplier Device Package ISOTOP
Base Product Number STGE50
Other Names -497-7011-5,1026-STGE50NC60VD,497-7011-5
Standard Package 10
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277481-STGE50NC60VD
Ultra Librarian 3D Model Ultra Librarian STGE50NC60VD CAD Model

Description

STGE50NC60VD - IGBT from STMicroelectronics

The STGE50NC60VD is a high-performance Insulated Gate Bipolar Transistor (IGBT) produced by STMicroelectronics, a leader in semiconductor solutions. Designed to meet the demanding requirements of power electronics, this IGBT combines the simple gate-drive characteristics of MOSFETs with the high-current and low-saturation-voltage capability of bipolar transistors. The STGE50NC60VD is a versatile and efficient solution for a wide range of applications, including motor drives, uninterruptible power supplies (UPS), and inverter systems for renewable energy sources.

Key Features:

  • High Current Capability: The STGE50NC60VD is capable of handling continuous currents up to 50A, making it suitable for high-power applications.
  • Low On-Voltage Drop (V<sub>CE(sat)): It features a low on-voltage drop, which translates to reduced conduction losses and improved overall efficiency.
  • High Switching Speed: With fast switching speeds, this IGBT can operate at higher frequencies, which can lead to smaller and more efficient designs.
  • High Operating Temperature: It can operate at junction temperatures up to 175°C, allowing for a broader range of applications in harsh environments.
  • Co-Packaged Diode: The inclusion of a free-wheeling diode in the package enhances the overall performance during switching and provides a more compact system design.

Applications:

The STGE50NC60VD is ideal for a variety of applications, including:

  • AC and DC motor drives
  • Power factor correction circuits
  • Inductive heating
  • Welding equipment
  • UPS systems
  • Renewable energy inverters, such as solar and wind power systems

Reliability and Quality:

STMicroelectronics is committed to delivering products that meet the highest standards of quality and reliability. The STGE50NC60VD IGBT is no exception, as it is manufactured with state-of-the-art technology and subjected to rigorous testing to ensure its performance under extreme conditions. This commitment to quality makes the STGE50NC60VD a reliable choice for designers looking to create robust and efficient power management systems.

Whether you are developing an advanced inverter system or looking to enhance the performance of existing power electronics, the STGE50NC60VD offers a powerful and reliable solution that can significantly improve efficiency, reduce system size, and ensure operational stability.

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