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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Obsolete(EOL)
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 15A
Pulsed Collector Current 21A
Collector-emitter saturation voltage(Max) 2.5V @ 15V, 3A
Maximum Power Dissipation 56W
Total Switching Energy(Ets) 20μJ (on), 68μJ (off)
Input Type Standard
Gate Charge 13.6nC
Turn-on and Turn-off delay time 12ns/76ns
Testing Conditions 390V, 3A, 10 Ohm, 15V
Reverse Recovery Time (trr) 21ns
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package I2PAK
Win Source Part Number 212279-STGB6NC60HD-1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian STGB6NC60HD-1 CAD Model

Description

STGB6NC60HD-1 IGBT by STMicroelectronics

The STGB6NC60HD-1 is a high-performance insulated gate bipolar transistor (IGBT) manufactured by STMicroelectronics, a leader in the semiconductor industry. This IGBT is designed to offer a combination of fast switching, low on-state voltage, and high thermal performance, making it suitable for a wide range of power switching applications.

Key Features

  • High Current Capability: The STGB6NC60HD-1 is capable of handling high currents, making it an excellent choice for applications that require robust power handling capabilities.
  • High Switching Speed: With its fast switching performance, this IGBT can operate at higher frequencies, which is beneficial for efficiency and allows for smaller and lighter system designs.
  • Low On-State Voltage: The device offers a low saturation voltage (V<sub>CE(sat)), which reduces conduction losses and improves overall system efficiency.
  • High Thermal Performance: The IGBT is designed with an optimal trade-off between switching performance and thermal resistance, ensuring reliable operation even under high temperature conditions.
  • Co-Packaged with Free Wheeling Diode: The STGB6NC60HD-1 includes an integrated fast recovery diode, which simplifies circuit design and enhances performance by providing an efficient freewheeling path during the off-state of the IGBT.

Applications

The STGB6NC60HD-1 is versatile and can be used in a variety of power applications, including:

  • Switch Mode Power Supplies (SMPS)
  • Uninterruptible Power Supplies (UPS)
  • Motor Drives
  • Power Factor Correction Circuits
  • Inductive Heating
  • Welding Equipment

Technical Specifications

The STGB6NC60HD-1 boasts impressive technical characteristics that ensure its performance in demanding situations:

  • Collector-Emitter Voltage (V<sub>CE): 600V
  • Collector Current (I<sub>C): 6A
  • Operating Junction Temperature (T<sub>j): -55°C to +150°C
  • Low Gate Charge (Q<sub>g)
  • Short-Circuit Withstand Time

With its robust design and advanced features, the STGB6NC60HD-1 from STMicroelectronics represents a reliable and efficient solution for designers looking to optimize their power management systems.

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