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Same model may have multiple batches, images only for reference.
IRG4PC50U Real Image
Same model may have multiple batches, images only for reference.

IRG4PC50U

Part No IRG4PC50U
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.65V, @Vge=15V, Ic=27A) | IGBT 600V 55A 200W TO247AC
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Bulk
Status Obsolete
Voltage - Collector Emitter Breakdown (Maximum) 600V
Current - Collector (Ic) (Maximum) 55A
Current - Collector Pulsed (Icm) 220A
Vce(on) (Maximum) at Vge, Ic 2V at 15V, 27A
Maximum Power 200W
Switching Energy 120μJ (on), 540μJ (off)
Input Type Standard
Gate Charge 180nC
Td (on/off) at 25°C 32ns/170ns
Test Condition 480V, 27A, 5Ohm, 15V
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Manufacturer Package TO-247-3
Supplier Device Package TO-247AC
Manufacturer Pack Quantity 25
MSL Level 1 (Unlimited)
Win Source Part Number 1188284-IRG4PC50U
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Power Management, Alternative Energy, Industrial
Ultra Librarian 3D Model Ultra Librarian IRG4PC50U CAD Model

Description

The Infineon Technologies IRG4PC50U is an IGBT designed for use in power management, alternative energy, and industrial applications.

  • Collector Current: 55A
  • Collector-Emitter Breakdown Voltage: 600V
  • Maximum Power Dissipation: 200W
  • Vce(on): 2V @ 15V and 27A
  • Gate Charge: 180nC
  • Package: TO-247AC
  • Switching Energy (On): 120μJ
  • Switching Energy (Off): 540μJ
  • Collector Pulsed Current: 220A
  • Test Condition: 480V, 27A, 5Ohm, 15V
  • td (on/off): 32ns/170ns @ 25°C

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