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FGB30N6S2

Part No FGB30N6S2
Manufacturer ON Semiconductor
Catalog IGBTs - Single
Description 600V, SMPS II Series N-Channel IGBT | IGBT 600V 45A 167W TO263AB
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tube
Status Obsolete
Voltage - Collector Emitter Breakdown (Maximum) 600V
Current - Collector (Ic) (Maximum) 45A
Current - Collector Pulsed (Icm) 108A
Vce(on) (Maximum) at Vge, Ic 2.5V at 15V, 12A
Maximum Power 167W
Switching Energy 55μJ (on), 100μJ (off)
Input Type Standard
Gate Charge 23nC
Td (on/off) at 25°C 6ns/40ns
Test Condition 390V, 12A, 10Ohm, 15V
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Manufacturer Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package TO-263AB
Family Part Number FGB30N6
Manufacturer Pack Quantity 400
MSL Level 1 (Unlimited)
Win Source Part Number 1174171-FGB30N6S2
Manufacturer Homepage www.fairchildsemi.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian FGB30N6S2 CAD Model

Description

Overview of ON Semiconductor's FGB30N6S2 Power MOSFET

The FGB30N6S2 is a high-performance Power MOSFET manufactured by ON Semiconductor, designed to cater to a wide range of power switching applications. This device is part of ON Semiconductor's portfolio of energy-efficient power management components, which are renowned for their reliability and performance.

Key Features

  • Voltage and Current Ratings: The FGB30N6S2 boasts a drain-to-source voltage (VDS) of 600V, which makes it suitable for high-voltage operations. It also supports a continuous drain current (ID) of 30A, ensuring it can handle significant power loads.
  • Low On-Resistance: With a low RDS(on), this MOSFET minimizes conduction losses, leading to higher efficiency in electronic circuits.
  • High-Speed Switching: The fast switching capabilities of the FGB30N6S2 make it an excellent choice for applications requiring quick transitions, such as switching power supplies and power converters.
  • Robust Thermal Performance: The MOSFET is encapsulated in a TO-263 (D2PAK) package, which provides excellent thermal characteristics and ensures stable performance even under high-temperature conditions.

Applications

The versatile nature of the FGB30N6S2 Power MOSFET allows it to be used in a variety of applications, including:

  • Power supply units (PSUs)
  • DC-DC converters
  • Motor drives
  • Lighting systems, such as LED drivers
  • Uninterruptible power supplies (UPS)
  • High-efficiency power inverters

Quality and Reliability

ON Semiconductor is committed to providing high-quality components that meet the stringent requirements of the electronics industry. The FGB30N6S2 is no exception, with its construction and materials selected to ensure long-term reliability and performance. The device is also RoHS compliant, reflecting ON Semiconductor's dedication to environmental sustainability.

In summary, the FGB30N6S2 Power MOSFET from ON Semiconductor stands out as a robust, efficient, and versatile component suitable for a broad array of high-voltage and high-power applications. Its superior electrical characteristics and thermal performance make it an ideal choice for designers looking to enhance the efficiency and reliability of their power management systems.

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