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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Reel - TR
Status Active
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 60A
Pulsed Collector Current 100A
Collector-emitter saturation voltage(Max) 2.5V @ 15V, 20A
Maximum Power Dissipation 200W
Total Switching Energy(Ets) 220μJ (on), 330μJ (off)
Input Type Standard
Gate Charge 100nC
Turn-on and Turn-off delay time 31ns/100ns
Testing Conditions 390V, 20A, 3.3 Ohm, 15V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Win Source Part Number 1103003-STGB20NC60V
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian STGB20NC60V CAD Model

Description

STGB20NC60V - IGBT from STMicroelectronics

The STGB20NC60V is a state-of-the-art Insulated Gate Bipolar Transistor (IGBT) produced by STMicroelectronics, a global semiconductor leader known for their innovative and reliable products. This IGBT is designed to combine the high-speed performance of a MOSFET with the high current and low saturation voltage capability of a bipolar transistor. The result is an efficient, high-performance device suitable for a broad range of applications, including motor drives, uninterruptible power supplies (UPS), induction heating, and power factor correction circuits.

This particular IGBT features a maximum collector-emitter voltage (Vce) of 600V and a collector current rating of 20A at 25°C. The STGB20NC60V is capable of operating at high frequencies thanks to its low gate charge and reduced tail current. These characteristics make it an excellent choice for high-frequency switching applications, ensuring efficient energy conversion and reduced power losses.

The device is housed in a TO-263 (D2PAK) package, which is known for its ability to handle high power levels and its ease of mounting on a printed circuit board (PCB). The package is designed to offer excellent thermal performance, ensuring reliability and longevity even under high-stress operating conditions.

One of the key features of the STGB20NC60V is its Short-Circuit Withstand Time (SCWT), which provides robustness and protection against short-circuit conditions, enhancing the safety and durability of the applications it is used in. Additionally, the IGBT is equipped with a co-packaged fast recovery diode, which minimizes switching losses and further improves the overall efficiency of the device.

STMicroelectronics has also prioritized the ease of use and integration of the STGB20NC60V by providing comprehensive technical support, including detailed datasheets, application notes, and simulation models. This support allows designers to fully harness the capabilities of the IGBT and accelerate the development of their power management solutions.

In summary, the STGB20NC60V from STMicroelectronics is a high-efficiency, robust, and versatile IGBT that offers designers a reliable solution for high-power and high-speed switching applications. Its combination of performance, durability, and support makes it a top choice for engineers looking to optimize their power management systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $2.2298 $66.8940
75+ $1.8296 $137.2200
110+ $1.7725 $194.9750
155+ $1.7153 $265.8715
200+ $1.6582 $331.6400
265+ $1.4866 $393.9490
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
Availability: 7,000 pieces
MOQ: 30 pcs
Order Increment : 1 piece
*Need More Quantity? *Request a Bulk Quantity Quotation?

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