STGB20N45LZAG - N-Channel 450 V, 0.190 ohm typ., 17 A MDmesh™ DM2 Power MOSFET in a D2PAK package by STMicroelectronics
The STGB20N45LZAG is a state-of-the-art N-Channel Power MOSFET presented by STMicroelectronics, designed to meet a wide range of high-efficiency applications. This device is part of the MDmesh™ DM2 series which features improved energy efficiency through lower on-resistance and reduced switching losses.
With its breakdown voltage of 450 V, the STGB20N45LZAG is ideally suited for high voltage applications that require a robust and reliable power management solution. The MOSFET's typical on-resistance of just 0.190 ohms ensures minimal conduction losses, making it an excellent choice for high-performance switching applications.
The device is capable of handling continuous currents up to 17 A, making it a suitable component for a variety of power-intensive applications. Its D2PAK package is not only compact but also offers excellent thermal performance, which is critical for maintaining stability and longevity in demanding situations.
The STGB20N45LZAG incorporates STMicroelectronics' second generation of MDmesh™ technology, which combines a vertical structure with the company's strip layout to deliver low on-resistance and reduced gate charge. These features contribute to the MOSFET's enhanced power efficiency and faster switching speeds, which are essential for modern electronic devices.
Furthermore, the device boasts a wide range of integrated protections, such as 100% avalanche tested ruggedness and a high dv/dt capability, safeguarding your circuit against harsh operating conditions. This ensures that the STGB20N45LZAG is not just powerful, but also a reliable component for your power circuit designs.
Whether you're designing power supplies, lighting applications, DC-DC converters, or any other system requiring efficient power management, the STGB20N45LZAG from STMicroelectronics offers the performance and reliability to meet your needs.
