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Category OEM Souring
Win Source Part Number 1468685-STGAP2SICSNCTR
Manufacturer STMicroelectronics
Package Tape & Reel (TR);Cut Tape (CT)
Product Status Active
Technology Capacitive Coupling
Number of Channels 1
Voltage - Isolation 4800Vpk
Common Mode Transient Immunity (Min) 100V/ns
Propagation Delay tpLH / tpHL (Max) 90ns, 90ns
Pulse Width Distortion (Max) 20ns
Rise / Fall Time (Typ) 30ns, 30ns
Current - Output High, Low 4A, -
Voltage - Output Supply 3.1V ~ 5.5V
Grade -
Operating Temperature -40°C ~ 125°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SO
Approval Agency UL, VDE
Ultra Librarian 3D Model Ultra Librarian STGAP2SICSNCTR CAD Model

Description

The STGAP2SICSNCTR by STMicroelectronics is an innovative galvanically isolated single gate drive specifically designed for Silicon Carbide (SiC) MOSFETs. This device can deliver up to 4A of gate drive current, ensuring robust and efficient switching of SiC MOSFETs, which are known for their high efficiency and performance in high-voltage and high-temperature environments. The galvanic isolation provides enhanced safety and reliability, making it an ideal choice for applications in electric vehicles, renewable energy inverters, and high-performance power conversion systems. Its high-speed operation and integrated protection features contribute to system efficiency and robustness, making the STGAP2SICSNCTR a key component in the development of next-generation power electronics.

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $1.8963 $56.8890
65+ $1.5560 $101.1400
100+ $1.5074 $150.7400
140+ $1.4587 $204.2180
180+ $1.4101 $253.8180
240+ $1.2642 $303.4080
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
Availability: 1,980 pieces
MOQ: 30 pcs
Order Increment : 1 pezzo
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