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STF31N65M5

Part No STF31N65M5
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description N-channel 650 V, 0.124 typ., 22 A MDmesh V Power MOSFET in D2PAK, TO-220FP, I2PakFP, TO-220 and TO-247 packages
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Series MDmesh V
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 650V
Current - Continuous Drain (Id) @ 25°C 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 45nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 816pF @ 100V
Vgs (Maximum) ±25V
Power Dissipation (Maximum) 30W (Tc)
Rds On (Maximum) @ Id, Vgs 148 mOhm @ 11A, 10V
Operating Temperature Range 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package TO-220FP
Package TO-220-3 Full Pack
Win Source Part Number 1260967-STF31N65M5
Manufacturer Homepage www.st.com
Popularity Medium
Supply and Demand Status Limited
Family Name STF31N65M5
Introduction Date February 23, 2012
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2030
Ultra Librarian 3D Model Ultra Librarian STF31N65M5 CAD Model

Description

STF31N65M5 - N-channel 650 V, 0.190 Ohm typ., 22 A MDmesh™ M5 Power MOSFET in a TO-220FP package

The STF31N65M5 from STMicroelectronics is a cutting-edge N-channel Power MOSFET that belongs to the MDmesh™ M5 series. This device is designed to deliver high efficiency and performance in a wide range of applications, including switch-mode power supplies (SMPS), lighting, welding, solar inverters, and other power conversion systems. Its state-of-the-art technology is aimed at minimizing on-resistance and maximizing power efficiency, making it an ideal choice for high-power and energy-sensitive applications.

The STF31N65M5 operates at a drain-source voltage of 650 V, which provides a generous margin for high-voltage applications, ensuring reliability and robustness. The device features a very low typical on-resistance of just 0.190 Ohm, which significantly reduces conduction losses and improves overall system efficiency. With a continuous drain current of 22 A, it can handle significant power levels, making it suitable for demanding power applications.

This Power MOSFET comes in a fully insulated TO-220FP package that offers excellent thermal performance and simplifies the assembly process. The package is designed to provide high dielectric strength and to ensure a high level of safety during operation. Moreover, the STF31N65M5 is optimized for high-frequency switching, which is beneficial for applications where efficiency and power density are critical.

The device also includes a fast recovery diode, which is an essential feature for applications that involve hard switching. This diode helps to reduce switching losses and enhances the overall performance of the power circuit. Additionally, the MOSFET is characterized by a low gate charge and low capacitances, which contribute to reduced switching losses and faster switching speeds.

In summary, the STF31N65M5 from STMicroelectronics is a high-performance N-channel Power MOSFET that offers a combination of high voltage capability, low on-resistance, and efficient switching performance. Its robust package and advanced features make it a smart choice for engineers looking to optimize their power applications for efficiency and reliability.

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Quantity Unit Price Ext. Price
16+ $3.8257 $61.2112
37+ $3.1391 $116.1467
57+ $3.0410 $173.3370
79+ $2.9429 $232.4891
102+ $2.8448 $290.1696
136+ $2.5505 $346.8680
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Availability: 9,000 pieces
MOQ: 6 pcs
Order Increment : 1 pcs
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