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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 600V
Id - Continuous Drain Current 18A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 188mOhm at 9A, 10V
Gate Source Voltage(th) (Maximum) at Id 4.75V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 29nC at 10V
Gate Source Voltage (Maximum) ±25V
Input Capacitance (Ciss) (Maximum) at Vds 1090pF at 100V
Power Dissipation (Maximum) 30W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-220FP
Manufacturer Package TO-220-3 Full Pack
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1260959-STF25N60M2-EP
Manufacturer Homepage www.st.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian STF25N60M2-EP CAD Model

Description

STF25N60M2-EP - STMicroelectronics

The STF25N60M2-EP is a state-of-the-art power MOSFET designed and manufactured by STMicroelectronics, a leader in the semiconductor industry. This high-performance component is engineered to meet the demands of a wide range of power applications requiring high efficiency, reliability, and thermal performance. The STF25N60M2-EP is part of the MDmesh™ M2 EP series, which features an advanced technology that combines the benefits of reduced on-resistance, low gate charge, and optimized capacitance profiles.

With a drain-source voltage (V<sub>DS) of 600V and a continuous drain current (I<sub>D) of 11A, this MOSFET is capable of handling significant power levels. The device also boasts a low gate charge (Q<sub>G) and reduced threshold voltage (V<sub>th), which contribute to its high switching efficiency. The R<sub>DS(on), or on-state resistance, is particularly low, ensuring minimal conduction losses and making the STF25N60M2-EP an excellent choice for high-efficiency power supplies and converters.

The MOSFET's robust and rugged design is encapsulated in a TO-220FP package, which provides an isolated mounting surface and improved heat dissipation characteristics. This package is well-suited for applications requiring a high level of thermal endurance and is capable of operating at junction temperatures ranging from -55°C to 150°C.

The STF25N60M2-EP is also characterized by its fast switching performance and a body diode with low reverse recovery time (t<sub>rr), which further enhances its efficiency in applications such as switch-mode power supplies, lighting, welding, and motor drives. Its suitability for high-frequency circuits makes it an ideal choice for modern electronic designs.

In summary, the STF25N60M2-EP from STMicroelectronics is a powerful and reliable MOSFET that offers a perfect blend of efficiency, thermal performance, and switching speed. It is designed for engineers who require a component that can deliver superior performance in challenging power management applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
19+ $3.0485 $57.9215
45+ $2.5014 $112.5630
70+ $2.4232 $169.6240
96+ $2.3451 $225.1296
124+ $2.2669 $281.0956
166+ $2.0324 $337.3784
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
Availability: 6,000 pieces
MOQ: 19 pcs
Order Increment : 1 piece
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