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STF18N65M2

Part No STF18N65M2
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description Extremely low gate charge
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Series MDmesh M2
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 650V
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 20nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 770pF @ 100V
Vgs (Maximum) ±25V
Power Dissipation (Maximum) 25W (Tc)
Rds On (Maximum) @ Id, Vgs 330 mOhm @ 6A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package TO-220FP
Package TO-220-3 Full Pack
Win Source Part Number 1260940-STF18N65M2
Manufacturer Homepage www.st.com
Popularity Medium
Supply and Demand Status Limited
Family Name STF18N65M2
Introduction Date December 15, 2014
ECCN EAR99
Ultra Librarian 3D Model Ultra Librarian STF18N65M2 CAD Model

Description

Introducing the STF18N65M2 – A Power MOSFET from STMicroelectronics

The STF18N65M2 is a state-of-the-art power MOSFET designed by STMicroelectronics, a global semiconductor leader known for its innovative and reliable products. This particular MOSFET is part of the MDmesh™ M2 series, which utilizes advanced technology to provide excellent RDS(on) per area combined with superior switching performance. The STF18N65M2 is specifically crafted to meet the high efficiency and power density demands of modern electronic applications.

Key Features of the STF18N65M2:

  • High Voltage Capability: With a breakdown voltage of 650V, the STF18N65M2 is well-suited for high voltage applications, ensuring reliability and robustness in challenging environments.
  • Low On-Resistance: The device boasts an extremely low on-state resistance (RDS(on)) of 0.165Ω, which translates to reduced conduction losses and improved overall efficiency.
  • Fast Switching Speed: Thanks to its MDmesh™ M2 technology, the STF18N65M2 offers fast switching speeds, which is crucial for reducing switching losses and improving performance in high-frequency applications.
  • 100% Avalanche Tested: This MOSFET is guaranteed to withstand rugged conditions as it is 100% avalanche tested, ensuring reliability and a long operational life.
  • Enhanced Body Diode: The inclusion of a fast and robust body diode ensures better performance during reverse recovery, which is particularly important in applications where the MOSFET is subject to hard commutation.

Applications:

The STF18N65M2 is versatile and can be used in a wide array of applications. It is particularly effective in:

  • Switch Mode Power Supplies (SMPS)
  • LED Lighting
  • High-Efficiency DC/DC Converters
  • Welding Equipment
  • Solar Inverters
  • Uninterruptible Power Supplies (UPS)

Quality and Environmental Compliance:

STMicroelectronics is committed to environmental sustainability and quality. The STF18N65M2 complies with the highest standards and regulations, including RoHS and Halogen-free compliance. This ensures that the product is not only high-performing but also environmentally friendly.

With its exceptional electrical characteristics and compliance with stringent quality standards, the STF18N65M2 from STMicroelectronics represents a reliable and efficient solution for power management challenges in a wide range of electronic systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
50+ $1.0635 $53.1750
115+ $0.8726 $100.3490
180+ $0.8454 $152.1720
245+ $0.8181 $200.4345
320+ $0.7908 $253.0560
425+ $0.7090 $301.3250
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 26,000 pieces
MOQ: 50 pcs
Order Increment : 1 pcs
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