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STF16N65M2

Part No STF16N65M2
Manufacturer STMicroelectronics
Catalog FETs - Single
Description Zener-protected | MOSFET N-CH 650V 11A TO220FP
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 650V
Id - Continuous Drain Current 11A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 360mOhm at 5.5A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 19.5nC at 10V
Gate Source Voltage (Maximum) ±25V
Input Capacitance (Ciss) (Maximum) at Vds 718pF at 100V
Power Dissipation (Maximum) 25W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-220FP
Manufacturer Package TO-220-3 Full Pack
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1260939-STF16N65M2
Manufacturer Homepage www.st.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian STF16N65M2 CAD Model

Description

The STF16N65M2 is a state-of-the-art N-channel 650V MDmesh™ M2 Power MOSFET designed and manufactured by STMicroelectronics. This device is a result of the second generation of MDmesh technology which combines the multiple drain process with the company's PowerMESH™ horizontal layout. This unique design approach provides an optimal trade-off between on-resistance and gate charge, ensuring high efficiency in a wide range of applications.

Key Features

  • High Voltage Capability: With a drain-source voltage (V<sub>DS) of 650V, the STF16N65M2 can handle high voltage applications with ease, making it suitable for a variety of power conversion systems.
  • Low On-Resistance: The device boasts an extremely low on-resistance (R<sub>DS(on)) of just 0.165 Ω, which minimizes conduction losses and improves overall efficiency.
  • Reduced Gate Charge: A low gate charge (Q<sub>g) enhances the switching performance, enabling faster switching speeds which are crucial for high-efficiency power supplies and converters.
  • 100% Avalanche Tested: Ensures reliability and robustness by guaranteeing that each device can withstand the specified energy in avalanche mode.

Applications

The STF16N65M2 is designed for a broad array of applications, particularly where power efficiency and high voltage are critical. Its typical uses include:

  • Switch Mode Power Supplies (SMPS)
  • LED Lighting Applications
  • High Efficiency DC-DC Converters
  • Welding Equipment
  • Solar Inverters
  • Uninterruptible Power Supplies (UPS)

Environmental and Quality Certifications

STMicroelectronics is committed to environmental sustainability and quality. The STF16N65M2 complies with various international standards, including:

  • RoHS Compliance for the reduction of hazardous substances
  • REACH Regulation ensuring protection of human health and the environment from risks posed by chemicals

The STF16N65M2 from STMicroelectronics is a top-tier Power MOSFET that provides designers with a versatile and efficient solution for high voltage power management challenges. Its advanced technology and robust design make it an ideal choice for industry professionals looking to enhance system performance and reliability.

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Pricing & Ordering

Quantity Unit Price Ext. Price
22+ $2.3781 $52.3182
52+ $1.9513 $101.4676
80+ $1.8903 $151.2240
110+ $1.8294 $201.2340
142+ $1.7684 $251.1128
190+ $1.5854 $301.2260
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,000 pieces
MOQ: 22 pcs
Order Increment : 1 pcs
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