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STF12NM50N

Part No STF12NM50N
Manufacturer STMicroelectronics
Catalog FETs - Single
Description N-channel 500V - 0.29Ω - 11A - TO-220 /FP- D2PAK - DPAK Second generation MDmesh™ Power MOSFET | MOSFET N-CH 500V 11A TO220FP
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 500V
Id - Continuous Drain Current 11A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 380mOhm at 5.5A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 30nC at 10V
Gate Source Voltage (Maximum) ±25V
Input Capacitance (Ciss) (Maximum) at Vds 940pF at 50V
Power Dissipation (Maximum) 25W
Temperature Range - Operating 150°C
Mounting Style Through Hole
Supplier Device Package TO-220FP
Manufacturer Package TO-220-3 Full Pack
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1260933-STF12NM50N
Manufacturer Homepage www.st.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian STF12NM50N CAD Model

Description

The STF12NM50N is a high-performance N-channel, Power MOSFET produced by the renowned semiconductor manufacturer STMicroelectronics. This MOSFET is part of the MDmesh™ II Plus low Qg series, which is designed to offer superior switching performance with low gate charge and low on-resistance. It is an ideal choice for a wide range of applications, including high-efficiency power supplies, lighting, motor control, and industrial applications.

Key Features

  • Voltage Rating: The STF12NM50N has a drain-source voltage (V<sub>DS) of up to 500V, which allows it to handle high voltage applications efficiently.
  • Current Capacity: It can support a continuous drain current (I<sub>D) of up to 11A, making it suitable for handling moderate to high current loads.
  • Low On-Resistance: With an on-resistance (R<sub>DS(on)) as low as 0.52Ω, it ensures minimal power loss and heat generation during operation.
  • High Switching Speed: Thanks to its low gate charge (Qg), the MOSFET offers fast switching, which is crucial for reducing switching losses in power conversion applications.
  • Improved Efficiency: The device's design is optimized to reduce conduction and switching losses, contributing to the overall efficiency of the systems in which it is used.
  • TO-220FP Package: The STF12NM50N comes in a fully molded TO-220FP package, which provides good thermal performance and is suitable for through-hole mounting.

Applications

  • Switch Mode Power Supplies (SMPS)
  • LED Lighting Systems
  • DC-DC Converters
  • Motor Control Circuits
  • Power Management Solutions

STMicroelectronics' STF12NM50N MOSFET is a testament to the company's commitment to providing power-efficient and reliable components. Its robust design and electrical characteristics make it a versatile choice for designers looking to optimize their power circuitry across various applications.

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