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STD4NK100Z

Part No STD4NK100Z
Manufacturer STMicroelectronics
Catalog FETs - Single
Description Very low intrinsic capacitance | MOSFET N-CH 1000V 2.2A DPAK
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Reel
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 1000V
Id - Continuous Drain Current 2.2A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 6.8Ohm at 1.1A, 10V
Gate Source Voltage(th) (Maximum) at Id 4.5V at 50μA
Gate Charge (Qg) (Maximum) at Vgs 18nC at 10V
Gate Source Voltage (Maximum) ±30V
Input Capacitance (Ciss) (Maximum) at Vds 601pF at 25V
Power Dissipation (Maximum) 90W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package DPAK
Manufacturer Package TO-252-3, DPak (2 Leads + Tab), SC-63
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Win Source Part Number 1260861-STD4NK100Z
Manufacturer Homepage www.st.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian STD4NK100Z CAD Model

Description

Product Overview: STD4NK100Z MOSFET

The STD4NK100Z is a high-performance N-channel Power MOSFET produced by STMicroelectronics, a leader in semiconductor technology. This device is part of the SuperMESH™ series, which is renowned for its excellent power efficiency and high switching performance. The STD4NK100Z is designed to meet the rigorous demands of modern electronic applications, making it an ideal choice for power supply, lighting, motor control, and industrial applications.

Key Features

  • High Voltage Capability: The STD4NK100Z can handle high drain-source voltages, up to 1000V, which makes it suitable for applications that experience high voltage transients or require high voltage operation.
  • Low Gate Charge: With a low gate charge (Qg), this MOSFET minimizes switching losses, allowing for more efficient operation at high frequencies.
  • Low On-resistance: The device features a very low on-state resistance (RDS(on)), which enhances its overall efficiency by reducing conduction losses when the MOSFET is on.
  • Zener-protected: The gate-source of the STD4NK100Z is protected by an integrated Zener diode, which shields the gate from static discharge and voltage spikes, thus enhancing the device's reliability and longevity.

Applications

  • Switch Mode Power Supplies (SMPS)
  • High Efficiency DC-DC Converters
  • Power Management Functions
  • Motor Control Systems
  • LED Lighting Solutions
  • Electronic Ballasts for Fluorescent Lighting

Technical Specifications

Parameter Value Drain-source Voltage (V<sub>DS) 1000V Continuous Drain Current (I<sub>D) 3A Power Dissipation (P<sub>D) 40W RDS(on) 3.3Ω Gate Charge (Qg) 15nC

The STD4NK100Z is available in a TO-252 package, which offers a compact form factor suitable for space-constrained applications. Its robust design and high-quality manufacturing ensure that it can withstand the challenging conditions of industrial environments. When it comes to high voltage, efficiency, and reliability, the STD4NK100Z MOSFET from STMicroelectronics is an excellent choice for designers and engineers looking to enhance their power management systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.4753 $51.6355
85+ $1.2106 $102.9010
130+ $1.1727 $152.4510
180+ $1.1349 $204.2820
230+ $1.0971 $252.3330
310+ $0.9836 $304.9160
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 90,000 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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