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STD2NB60

Part No STD2NB60
Manufacturer STMicroelectronics
Catalog FETs - Single
Description N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET
Sample
Rohs State rohs
ECAD Module
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Manufacturer STMicroelectronics
Category Discrete Semiconductor Products
Family FETs - Single
Win Source Part Number 194334-STD2NB60
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian STD2NB60 CAD Model

Description

Product Overview: STD2NB60 from STMicroelectronics

The STD2NB60 is a robust N-channel MOSFET transistor designed and manufactured by STMicroelectronics, a leader in semiconductor solutions. This power MOSFET is part of STMicroelectronics' STripFET™ series, which is known for its high efficiency and reduced power losses. The STD2NB60 is designed to address a wide array of applications, including switch-mode power supplies (SMPS), high-efficiency DC-DC converters, motor control circuits, and general-purpose switching applications.

Key Features

  • Low Threshold Drive: The device can be driven at a low gate threshold voltage, which makes it suitable for low-voltage applications and ensures low on-state resistance (RDS(on)) at low gate voltages.
  • High Switching Speed: With fast switching capabilities, the STD2NB60 improves the performance of power circuits by reducing switching losses, thus enhancing overall efficiency.
  • 100% Avalanche Tested: Each unit is rigorously tested for avalanche ruggedness, ensuring reliability and robustness in applications where the device may be subjected to high-stress conditions.
  • Low Gate Charge: The MOSFET is designed with a low gate charge (Qg), which minimizes the power required to switch the device on and off, further contributing to the energy efficiency of the end application.

Applications

The versatility of the STD2NB60 allows it to be used in a variety of electronic circuits and systems. It is particularly well-suited for:

  • Power management in portable and battery-powered devices
  • DC-AC inverters for solar energy systems
  • LED lighting applications
  • Automotive applications
  • Industrial automation and control systems

Technical Specifications

The STD2NB60 boasts the following technical specifications:

  • Drain-source Voltage (VDSS): 600V
  • Continuous Drain Current (ID): 2A
  • Power Dissipation (PD): 25W
  • Operating Temperature Range: -55°C to 150°C

With its combination of high performance, efficiency, and reliability, the STD2NB60 is an excellent choice for designers and engineers looking to optimize their power electronic systems. STMicroelectronics' commitment to quality ensures that this MOSFET will deliver the performance expected for a wide range of demanding applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $1.0268 $61.6080
140+ $0.8432 $118.0480
215+ $0.8166 $175.5690
295+ $0.7900 $233.0500
380+ $0.7635 $290.1300
510+ $0.6849 $349.2990
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 20,000 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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