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STB75NH02LT4

Part No STB75NH02LT4
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description N-Channel 24V - 0.0062ohm - 60A - D2PAK STripFET TM III Power MOSFET
Datasheet
Sample
Rohs State Need to verify
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Series STripFET III
Packaging Reel - TR
Part Status Obsolete(EOL)
Channel Type Type N
Technology MOSFET
Drain Source Voltage 24V
Current - Continuous Drain (Id) @ 25°C 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Vgs(th) (Maximum) @ Id 1.8V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 22nC @ 5V
Input Capacitance (Ciss) (Maximum) @ Vds 2050pF @ 15V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 80W (Tc)
Rds On (Maximum) @ Id, Vgs 8 mOhm @ 30A, 10V
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting SMD
Manufacturer Package D2PAK
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1260695-STB75NH02LT4
Manufacturer Homepage www.st.com
Family Name STB75NH02L
Introduction Date July 25, 2003
ECCN EAR99
Estimated EOL Date Obsolete
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian STB75NH02LT4 CAD Model

Description

STB75NH02LT4 - N-Channel 24V - 0.0028 Ohm - 80A - D2PAK STripFET™ II Power MOSFET

The STB75NH02LT4 is a high-performance N-Channel Power MOSFET from STMicroelectronics, renowned for its efficiency and thermal performance. This Power MOSFET is a part of the STripFET™ II series, which is recognized for its low on-resistance and low gate charge, making it an ideal choice for a wide range of power applications.

With a drain-source voltage of 24V, the STB75NH02LT4 is designed to handle high currents with ease, boasting a continuous drain current of 80A. Its low on-resistance of just 0.0028 Ohm minimizes power losses and improves overall efficiency, which is crucial for energy-sensitive designs.

The device is housed in a D2PAK package, which is known for its ability to dissipate heat effectively, thus ensuring reliable operation even under high current conditions. The D2PAK package also allows for compact PCB layouts, which is beneficial for space-constrained applications.

Key features of the STB75NH02LT4 include:

  • Low threshold drive
  • Very low on-resistance R<sub>DS(on)
  • High current carrying capability
  • 100% avalanche tested
  • Exceptional thermal performance
  • Logic level threshold

This Power MOSFET is suitable for a variety of applications, including:

  • Switching regulators
  • Switching converters
  • Motor drivers
  • Power management in portable and battery-powered products
  • Load switch applications

The STB75NH02LT4 is also characterized by its robustness, as it is 100% avalanche tested, ensuring that it can withstand tough conditions without failing. The MOSFET's logic level threshold allows for easy drive from logic circuits, making it user-friendly for designers integrating the component into digital systems.

In conclusion, the STB75NH02LT4 from STMicroelectronics is a powerful and reliable component that offers a combination of low power losses, high efficiency, and thermal performance for advanced power management solutions. Its versatility makes it a go-to choice for engineers looking to optimize their power designs for both performance and size.

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