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STB6N60M2

Part No STB6N60M2
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description Extremely low gate charge
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Series MDmesh II Plus
Packaging Reel - TR
Channel Type Type N
Technology MOSFET
Drain Source Voltage 600V
Current - Continuous Drain (Id) @ 25°C 4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 8nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 232pF @ 100V
Vgs (Maximum) ±25V
Power Dissipation (Maximum) 60W (Tc)
Rds On (Maximum) @ Id, Vgs 1.2 Ohm @ 2.25A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting SMD
Manufacturer Package D2PAK
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1260682-STB6N60M2
Manufacturer Homepage www.st.com
Popularity Medium
Supply and Demand Status Limited
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2028
Ultra Librarian 3D Model Ultra Librarian STB6N60M2 CAD Model

Description

STB6N60M2 - N-channel 600 V, 1.2 Ω typ., 5 A SuperMESH™2 Power MOSFET in D²PAK from STMicroelectronics

The STB6N60M2 from STMicroelectronics is a high-efficiency N-channel power MOSFET designed to deliver optimal performance for a wide range of high-power applications. This device is part of the SuperMESH™2 series, which is renowned for its excellent RDS(on) area ratio and reduced gate charge, ensuring high efficiency in power conversion.

Key Features:

  • High Voltage Capability: The STB6N60M2 operates at a drain-source voltage of 600 V, making it suitable for high voltage applications that require efficient power management.
  • Low On-Resistance: With a typical on-resistance of 1.2 Ω, this MOSFET minimizes conduction losses, improving overall device efficiency and performance.
  • High Current Rating: The device can handle continuous drain currents up to 5 A, allowing it to drive significant loads without overheating or performance degradation.
  • Enhanced Switching Performance: Thanks to its optimized gate charge, the STB6N60M2 provides fast and reliable switching, which is crucial for applications such as switching regulators, converters, and motor drivers.
  • 100% Avalanche Tested: Each unit is rigorously tested to ensure it can withstand high-energy pulses in the avalanche and commutation modes, offering improved reliability and robustness.
  • Application Versatility: This MOSFET is ideal for a variety of applications, including power supplies, lighting, welding, and other high-performance power management solutions.

Package and Quality:

The STB6N60M2 is housed in a D²PAK package, which is designed for compact and efficient thermal performance, making it suitable for space-constrained applications. The device also complies with the stringent standards of STMicroelectronics' manufacturing, ensuring high quality and reliability for industrial and commercial use.

Environmental Compliance:

STMicroelectronics is committed to environmental sustainability. The STB6N60M2 is compliant with RoHS and Halogen-Free standards, reducing the environmental impact and making it a responsible choice for eco-friendly electronic designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.6087 $64.3480
90+ $1.3201 $118.8090
140+ $1.2787 $179.0180
190+ $1.2375 $235.1250
245+ $1.1963 $293.0935
325+ $1.0725 $348.5625
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 990 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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