The STB4NK60Z is a robust N-channel, Zener-protected SuperMESH™ Power MOSFET designed and manufactured by STMicroelectronics. This high-density device is part of a new generation of power MOSFETs that combine the advantages of reduced on-resistance, exceptional switching performance, and strong gate charge minimization. The STB4NK60Z is particularly suitable for high efficiency applications, ensuring energy savings in a wide array of power conversion and management challenges.

This MOSFET operates at a drain-source voltage (V<sub>DS) of 600V, with a low threshold voltage designed to facilitate the drive conditions. It has a continuous drain current (I<sub>D) of 4A at 25°C, which ensures reliable operation under a standard temperature range. The device also features a low gate charge (Q<sub>g) and low reverse recovery time (t<sub>rr), which are critical parameters for high-efficiency switching.

The STB4NK60Z includes a built-in Zener diode from gate to source for ESD protection, which enhances its robustness against electrostatic discharges during handling and operation. This feature also simplifies the design of gate driving circuits by eliminating the need for external protection components.

Key Features:

• 100% avalanche tested
• Exceptional dv/dt capability
• Gate charge minimized
• Very low intrinsic capacitances
• Very good manufacturing repeatability

Applications:

The STB4NK60Z is versatile and can be used in a variety of applications, including:

• Switch Mode Power Supplies (SMPS)
• High Current Switching
• Power Factor Correction (PFC) circuits
• Electronic lamp ballasts based on half-bridge topology
• DC-AC converters for welding equipment and Uninterruptible Power Supplies (UPS)

With its impressive combination of features, the STB4NK60Z is an excellent choice for designers looking for a reliable and high-performance power MOSFET. STMicroelectronics' commitment to quality and innovation ensures that this component will meet the demanding requirements of modern electronic applications.