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STB25NM60N

Part No STB25NM60N
Manufacturer STMicroelectronics
Catalog FETs - Single
Description N-CHANNEL 600V 0.140-20A TO-220/FP/DAK/TO-247 SECOND GENERATION MDmesh MOSFET | MOSFET N-CH 600V 21A D2PAK
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Cut Tape (CT)
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 600V
Id - Continuous Drain Current 21A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 160mOhm at 10.5A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 84nC at 10V
Gate Source Voltage (Maximum) ±25V
Input Capacitance (Ciss) (Maximum) at Vds 2400pF at 50V
Power Dissipation (Maximum) 160W
Temperature Range - Operating 150°C
Mounting Style SMD
Supplier Device Package D2PAK
Manufacturer Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Win Source Part Number 1260630-STB25NM60N
Manufacturer Homepage www.st.com
Family Name STB25NM60N
Introduction Date November 30, 2004
ECCN EAR99
Estimated EOL Date Obsolete
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian STB25NM60N CAD Model

Description

The STB25NM60N is a high-performance N-Channel MOSFET designed and manufactured by STMicroelectronics, a global leader in semiconductor solutions. This power MOSFET is part of STMicroelectronics' MDmesh™ II series, which is renowned for its excellent energy efficiency and high power density. It is specifically engineered to address the demanding requirements of a wide range of electronic applications, including switch-mode power supplies (SMPS), lighting, DC-AC converters, and motor control systems.

Key Features:

  • Low On-Resistance: The STB25NM60N boasts an exceptionally low on-resistance (R<sub>DS(on)), which significantly reduces conduction losses and improves overall efficiency.
  • High Voltage Capability: With a drain-source voltage (V<sub>DSS) of 600V, this MOSFET can handle high voltage applications with ease, making it suitable for industrial and power management systems.
  • Fast Switching Speed: The device is designed for fast switching, which is critical for reducing switching losses and improving performance in high-frequency circuits.
  • 100% Avalanche Tested: Each unit is rigorously tested for avalanche ruggedness, ensuring reliability and robustness in applications where the MOSFET is exposed to high-energy pulses.
  • Low Gate Charge (Q<sub>G): A low gate charge facilitates faster switching and reduced driving power, contributing to the energy efficiency of the overall system.
  • Enhanced Body Diode: The STB25NM60N features an improved body diode with low reverse recovery time (t<sub>rr) and low reverse recovery charge (Q<sub>rr), which enhances performance during diode conduction mode in applications such as synchronous rectification.

Applications:

The versatility of the STB25NM60N MOSFET makes it an ideal choice for a variety of high-efficiency applications. Its robustness and energy-saving characteristics are particularly beneficial for:

  • High-efficiency switch-mode power supplies
  • Power inverters and converters
  • LED lighting solutions
  • Motor control systems
  • Power management circuits

STMicroelectronics' commitment to innovation is embodied in the STB25NM60N, offering designers a powerful, efficient, and reliable component that can meet the challenges of modern electronic designs.

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