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STB100NF03L-03-1

Part No STB100NF03L-03-1
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description N-channel 30V - 0.0026ohm - 100A - D2PAK/I2/TO-220 STripFET TM III Power MOSFET
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Series STripFET III
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 30V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Vgs(th) (Maximum) @ Id 2.5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 88nC @ 5V
Input Capacitance (Ciss) (Maximum) @ Vds 6200pF @ 25V
Vgs (Maximum) ±16V
Power Dissipation (Maximum) 300W (Tc)
Rds On (Maximum) @ Id, Vgs 3.2 mOhm @ 50A, 10V
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting Style Through Hole
Manufacturer Package I2PAK
Package TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 1260573-STB100NF03L-03-1
Manufacturer Homepage www.st.com
Popularity Medium
Supply and Demand Status Limited
Family Name STB100NF03L-03
Introduction Date February 08, 2002
ECCN EAR99
Country of Origin China
Estimated EOL Date Obsolete
Quantity per package 50
Ultra Librarian 3D Model Ultra Librarian STB100NF03L-03-1 CAD Model

Description

The STB100NF03L-03-1 is a high-performance N-channel MOSFET produced by STMicroelectronics, a leader in semiconductor solutions. This device is specifically designed to deliver efficiency and power handling capabilities suitable for a wide array of applications, including high-efficiency switching and power management in computing and industrial platforms.

Key Features

  • Voltage and Current Ratings: It operates with a drain-source voltage (VDS) of 30V, continuous drain current (ID) of 100A, which makes it an excellent choice for high current applications.
  • Low On-Resistance: With an ultra-low on-resistance (RDS(on)) of just 3mΩ, it ensures minimal power loss and heat generation during operation, enhancing the system reliability and efficiency.
  • High-Speed Switching: The STB100NF03L-03-1 is designed for fast switching, reducing transition losses and improving performance in high-frequency circuits.
  • Advanced Technology: Utilizing STMicroelectronics' proprietary STripFET™ III technology, this MOSFET offers an excellent figure of merit (FOM) and reduced gate charge (Qg), which is critical for high-efficiency power conversion.
  • Robust Thermal Performance: The device is encapsulated in a D2PAK package, known for its ability to handle high thermal loads, making it suitable for challenging thermal environments.

Applications

The STB100NF03L-03-1 is versatile and can be used in a variety of applications, including:

  • DC/DC converters for computing and telecom systems
  • Motor drives and inverters
  • Power supplies for PoE, servers, and VRMs
  • Automotive applications and power management tasks

Quality and Reliability

STMicroelectronics is committed to delivering products that meet the highest standards of quality and reliability. The STB100NF03L-03-1 MOSFET is no exception, and it is manufactured to ensure performance stability and longevity under varying conditions, backed by rigorous testing and validation processes.

Environmental Compliance

The STB100NF03L-03-1 is compliant with RoHS and other environmental regulations, reflecting STMicroelectronics' dedication to environmental sustainability and the production of eco-friendly products.

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