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MASTERGAN2TR

Part No MASTERGAN2TR
Manufacturer STMicroelectronics
Catalog PMIC - Full, Half - Bridge Drivers
Description IC HALF BRIDG DRV 6.5A/10A 31QFN / Half Bridge Driver General Purpose DMOS 31-QFN (9x9)
Sample
Rohs State rohs
ECAD Module
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Category Integrated Circuits (ICs) - Power Management (PMIC) - Full Half-Bridge Drivers
Mfr STMicroelectronics
Series -
Package Tape & Reel
Product Status Active
Output Configuration Half Bridge
Applications General Purpose
Interface -
Load Type Inductive, Capacitive
Technology DMOS
Rds On (Typ) 150mOhm LS, 225mOhm HS
Current - Output / Channel 6.5A, 10A
Current - Peak Output 17A
Voltage - Supply 4.75V ~ 4.75V
Voltage - Load 600V (Max)
Temperature Range - Operating -40°C ~ 125°C (TJ)
Features Bootstrap Circuit
Fault Protection Over Temperature, UVLO
Mounting Type Surface Mount
Package / Case 31-VQFN Exposed Pad
Supplier Device Package 31-QFN (9x9)
MSL Level 3 (168 Hours)
REACH Status REACH Unaffected
Win Source Part Number 1372569-MASTERGAN2TR
Ultra Librarian 3D Model Ultra Librarian MASTERGAN2TR CAD Model

Description

Introducing the MASTERGAN2TR from STMicroelectronics

The MASTERGAN2TR is an advanced power solution designed by STMicroelectronics to meet the growing demands of high-efficiency, compact power conversion systems. This innovative product integrates a gate driver and two enhancement mode GaN transistors in a single package, providing an exceptional level of integration for users looking to leverage the benefits of Gallium Nitride technology.

Key Features

  • High-Efficiency GaN Technology: The MASTERGAN2TR utilizes Gallium Nitride (GaN), which offers lower on-resistance and faster switching capabilities compared to traditional silicon-based transistors. This leads to increased efficiency in power conversion applications.
  • Integrated Dual-Channel Gate Driver: The device includes an optimized gate driver specifically designed to drive the GaN transistors, ensuring excellent performance while reducing external component count.
  • 600V Half-Bridge Configuration: The two GaN transistors are configured in a half-bridge topology, capable of handling voltages up to 600V, making it suitable for a wide range of high-voltage applications.
  • Compact and Robust Design: The MASTERGAN2TR's integration enables a reduced PCB footprint and simplifies the circuit design, which is crucial for space-constrained applications. Its robust package is designed to withstand harsh environments and provide reliable performance.
  • Advanced Protection Features: The device includes smart features such as under-voltage lockout (UVLO), over-temperature shutdown, and a dedicated shutdown pin, ensuring safe operation and protection for the end system.

Applications

The MASTERGAN2TR is versatile and can be used in a variety of applications, including:

  • Switch-mode power supplies (SMPS)
  • LED lighting
  • DC-DC converters
  • Chargers for electric vehicles
  • Power adapters
  • Telecom and server power supplies

With its advanced integration, the MASTERGAN2TR is an ideal choice for designers aiming to improve efficiency, reduce size, and enhance the performance of their power conversion systems. STMicroelectronics continues to lead the way in power semiconductor innovation, and the MASTERGAN2TR is a testament to their commitment to providing cutting-edge solutions for the electronics industry.

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