The M95080-WMN6T is a part of the M95 series of Electrically Erasable Programmable Read-Only Memory (EEPROM) devices from STMicroelectronics, a global leader in semiconductor solutions. This particular EEPROM chip provides a robust storage solution for applications requiring data retention and flexible read/write operations without the need for a power source to maintain the stored information.
Key Features
- Memory Size: The M95080-WMN6T offers a capacity of 8 Kbits, which is organized as 1K x 8 bits. This size is perfect for storing configuration parameters, calibration data, or small application logs.
- Interface: It is compatible with the Serial Peripheral Interface (SPI) bus, ensuring high-speed data transfer and seamless integration with a wide range of microcontrollers and processors.
- Operating Voltage Range: The device operates within a voltage range of 2.5V to 5.5V, making it suitable for various electronic systems and portable devices.
- Write Cycle Time: It features a fast write cycle time of 5ms, allowing quick updates to stored data.
- Data Retention: The EEPROM provides a long data retention period of over 40 years, ensuring the reliability of stored information over an extended period.
- Endurance: The M95080-WMN6T is rated for 1 million write cycles, demonstrating its high endurance and suitability for applications with frequent data updates.
- Temperature Range: It is designed to operate over an industrial temperature range from -40°C to +85°C, making it ideal for harsh environments.
- Package: The device comes in an 8-pin SOIC (Narrow) package, which is widely used and easy to solder onto a PCB.
Applications
The M95080-WMN6T EEPROM is versatile and can be used in a variety of applications, including:
- Industrial and medical equipment
- Consumer electronics
- Automotive systems
- Portable devices
- Telecommunication systems
With its combination of reliability, endurance, and compatibility, the M95080-WMN6T from STMicroelectronics is an excellent choice for designers and engineers looking for a dependable non-volatile memory solution.
